Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure.

NiO UV amplification photodetector β-Ga2O3

Journal

Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366

Informations de publication

Date de publication:
09 Oct 2023
Historique:
received: 14 09 2023
revised: 02 10 2023
accepted: 04 10 2023
medline: 14 10 2023
pubmed: 14 10 2023
entrez: 14 10 2023
Statut: epublish

Résumé

In this paper, an n-p-n structure based on a β-Ga

Identifiants

pubmed: 37837164
pii: s23198332
doi: 10.3390/s23198332
pmc: PMC10575374
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Références

ACS Appl Mater Interfaces. 2019 Sep 25;11(38):35095-35104
pubmed: 31462042
Nanoscale Res Lett. 2020 Feb 22;15(1):47
pubmed: 32088767
J Phys Chem Lett. 2023 Jul 20;14(28):6444-6450
pubmed: 37433104

Auteurs

Shinji Nakagomi (S)

Department of Information Technology and Electronics, Faculty of Science and Engineering, Ishinomaki Senshu University, Ishinomaki 986-8580, Japan.

Classifications MeSH