Electronic structure in a transition metal dipnictide TaAs

angle-resolved photoemission spectroscopy electronic structure extreme magnetoresistance transition metal dipnictide

Journal

Journal of physics. Condensed matter : an Institute of Physics journal
ISSN: 1361-648X
Titre abrégé: J Phys Condens Matter
Pays: England
ID NLM: 101165248

Informations de publication

Date de publication:
14 Nov 2023
Historique:
received: 01 08 2023
accepted: 19 10 2023
medline: 20 10 2023
pubmed: 20 10 2023
entrez: 19 10 2023
Statut: epublish

Résumé

The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently,TaAs2, a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the (2‾01) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface ofTaAs2are trivial bulk bands. The absence of symmetry-protected surface state on the (2‾01) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR ofTaAs2.

Identifiants

pubmed: 37857273
doi: 10.1088/1361-648X/ad04fc
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

Creative Commons Attribution license.

Auteurs

Sabin Regmi (S)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.
Currently at Idaho National Laboratory, Idaho Falls, ID 83415, United States of America.

Cheng-Yi Huang (CY)

Department of Physics, Northeastern University, Boston, MA 02115, United States of America.

Mojammel A Khan (MA)

Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, United States of America.

Baokai Wang (B)

Department of Physics, Northeastern University, Boston, MA 02115, United States of America.

Anup Pradhan Sakhya (A)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.

M Mofazzel Hosen (MM)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.

Jesse Thompson (J)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.

Bahadur Singh (B)

Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India.

Jonathan D Denlinger (JD)

Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America.

Masahiro Ishigami (M)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.

J F Mitchell (JF)

Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, United States of America.

Dariusz Kaczorowski (D)

Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland.

Arun Bansil (A)

Department of Physics, Northeastern University, Boston, MA 02115, United States of America.

Madhab Neupane (M)

Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America.

Classifications MeSH