Temperature-Dependent Conduction and Photoresponse in Few-Layer ReS
Schottky barrier
field-effect transistor
photoconductivity
pressure
rhenium diselenide
temperature
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
01 Nov 2023
01 Nov 2023
Historique:
medline:
20
10
2023
pubmed:
20
10
2023
entrez:
20
10
2023
Statut:
ppublish
Résumé
The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors (FETs) have been widely studied; however, only a few works have investigated the photocurrent as a function of temperature. In this paper, we perform the electrical characterization of few-layer ReS
Identifiants
pubmed: 37862154
doi: 10.1021/acsami.3c12973
pmc: PMC10623565
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
50302-50311Références
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