ZnO/Au/GaN heterojunction-based self-powered photoelectrochemical Sensor for alpha-fetoprotein detection.

In recent years, the development of miniature and portable sensors has been a major focus of research. PEC self-powered sensors have emerged as a potential solution to the power supply issue, eliminating the need for external power supplies and operating without bias voltage. This study developed a ZnO/Au/GaN sensor for highly sensitive detection of alpha-fetoprotein (AFP). The sensor uses GaN substrates with nanogold films to provide an auxiliary bias voltage, promoting high photogenerated current density. Using ZnO/Au/GaN as a photoanode resulted in significantly higher photocurrent generated by the sensor compared to Au/GaN or ZnO/ITO alone. To enable selective detection of AFP, antibody modification of the ZnO nanorod arrays was employed. The linear range of the sensor response to AFP was determined to be 0.080-5.0 ng/mL, with an impressively low detection limit of 0.027 ng/mL (S/N = 3). These results demonstrate the potential of this self-powered sensor for detecting AFP content in human serum samples. Overall, this study presents a novel approach for developing highly sensitive and selective self-powered sensors for biomarker detection, which could facilitate early detection and clinical diagnosis of various types of cancer.

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Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.