Large-Area MoS

GaN MoS2 electrical properties pulsed laser deposition sapphire substrates structural properties

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
26 Oct 2023
Historique:
received: 03 10 2023
revised: 19 10 2023
accepted: 24 10 2023
medline: 10 11 2023
pubmed: 10 11 2023
entrez: 10 11 2023
Statut: epublish

Résumé

In this paper, we present the preparation of few-layer MoS

Identifiants

pubmed: 37947682
pii: nano13212837
doi: 10.3390/nano13212837
pmc: PMC10647872
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : MIUR, NKFIH, ANR, SAS
ID : Graphene Flagship, Flag Era - ETMOS
Organisme : Slovak Grant Agency for Science
ID : VEGA 2/0140/22
Organisme : Slovak Research and Development Agency
ID : APVV-19-0303
Organisme : CNR/HAS
ID : bilateral project GHOST-III
Organisme : MUR
ID : PRIN project "2DIntegratE" (2022RHRZN2)

Références

Br J Radiol. 2014 Oct;87(1042):20140401
pubmed: 25074791
Nat Nanotechnol. 2012 Nov;7(11):699-712
pubmed: 23132225
ACS Nano. 2016 Mar 22;10(3):3580-8
pubmed: 26866442
Nano Lett. 2013 Sep 11;13(9):4212-6
pubmed: 23930826
Sci Rep. 2013;3:1866
pubmed: 23689610
Nat Nanotechnol. 2014 Apr;9(4):262-7
pubmed: 24608231
Nanotechnology. 2014 Oct 10;25(40):405702
pubmed: 25213380
ACS Nano. 2010 May 25;4(5):2695-700
pubmed: 20392077
Sci Rep. 2018 Aug 7;8(1):11799
pubmed: 30087388
Nat Mater. 2013 Sep;12(9):815-20
pubmed: 23793161
Nat Mater. 2014 Dec;13(12):1091-5
pubmed: 25173579
Adv Mater. 2012 May 2;24(17):2320-5
pubmed: 22467187
Science. 2011 Feb 4;331(6017):568-71
pubmed: 21292974
ACS Appl Mater Interfaces. 2018 May 23;10(20):17419-17426
pubmed: 29706066
Nano Lett. 2010 Apr 14;10(4):1271-5
pubmed: 20229981
Phys Rev Lett. 2010 Sep 24;105(13):136805
pubmed: 21230799

Auteurs

Marianna Španková (M)

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia.

Štefan Chromik (Š)

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia.

Edmund Dobročka (E)

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia.

Lenka Pribusová Slušná (L)

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia.

Marcel Talacko (M)

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104 Bratislava, Slovakia.

Maroš Gregor (M)

Faculty of Mathematics, Physics and Informatics, Comenius University Bratislava, 84248 Bratislava, Slovakia.

Béla Pécz (B)

HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary.

Antal Koos (A)

HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary.

Giuseppe Greco (G)

Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Salvatore Ethan Panasci (SE)

Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Patrick Fiorenza (P)

Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Fabrizio Roccaforte (F)

Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Yvon Cordier (Y)

CNRS, CRHEA, Université Côte d'Azur, 06560 Valbonne, France.

Eric Frayssinet (E)

CNRS, CRHEA, Université Côte d'Azur, 06560 Valbonne, France.

Filippo Giannazzo (F)

Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Classifications MeSH