Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions.
Journal
ACS omega
ISSN: 2470-1343
Titre abrégé: ACS Omega
Pays: United States
ID NLM: 101691658
Informations de publication
Date de publication:
07 Nov 2023
07 Nov 2023
Historique:
received:
29
09
2023
revised:
16
10
2023
accepted:
18
10
2023
medline:
16
11
2023
pubmed:
16
11
2023
entrez:
16
11
2023
Statut:
epublish
Résumé
In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10
Identifiants
pubmed: 37970004
doi: 10.1021/acsomega.3c07568
pmc: PMC10633851
doi:
Types de publication
Journal Article
Langues
eng
Pagination
41977-41982Informations de copyright
© 2023 The Authors. Published by American Chemical Society.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.
Références
Nano Lett. 2017 May 10;17(5):2865-2870
pubmed: 28350468
Chem Commun (Camb). 2011 Jun 14;47(22):6398-400
pubmed: 21552599
Phys Rev Lett. 2014 May 9;112(18):187601
pubmed: 24856721
Sci Rep. 2015 Apr 30;5:9935
pubmed: 25927476
Nat Commun. 2015 Aug 12;6:8049
pubmed: 26264864
Materials (Basel). 2022 Dec 03;15(23):
pubmed: 36500133
Nanotechnology. 2008 Aug 27;19(34):345203
pubmed: 21730641
Nat Commun. 2018 Mar 14;9(1):1084
pubmed: 29540689
Phys Rev Lett. 2011 Feb 25;106(8):087205
pubmed: 21405599
Nano Lett. 2007 Sep;7(9):2778-83
pubmed: 17718588