Enhanced Broadband Light Harvesting in Ultrathin Absorbers Enabled by Epitaxial Stabilization of Silver Thin Film Mirrors.

broadband absorption metal-oxides photoelectrochemistry strong interference thin films

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
28 Nov 2023
Historique:
medline: 29 11 2023
pubmed: 29 11 2023
entrez: 29 11 2023
Statut: aheadofprint

Résumé

Silver thin film mirrors are attractive candidates for use as specular back reflectors to enhance broadband light absorption via strong optical interference in ultrathin film semiconductor photoabsorbers. However, deposition of metal-oxide absorbers often requires exposure to high temperature in an oxygen atmosphere, conditions that cause thermal etching and degrade the specular reflectance of silver films. Here, we overcome this challenge and demonstrate that epitaxial growth of silver mitigates thermal etching under the high-temperature oxygen-containing environments that cause polycrystalline films to degrade. The degree of thermal etching resistance is related to the epitaxial film structure, where high-quality films completely prevent thermal etching, allowing for direct deposition of metal-oxide thin film photoabsorbers at elevated temperatures without any degradation of the optical properties of the silver layer. As a proof of concept for device applications, a metal-oxide photoanode for photoelectrochemical water splitting is fabricated by directly growing epitaxial SnO

Identifiants

pubmed: 38018144
doi: 10.1021/acsami.3c14101
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Sa'ar Shor Peled (S)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.
Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Kumaraswamy Miriyala (K)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.
Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Alexander Rashkovskiy (A)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.
Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Ron Fishov (R)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.
Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Vitali Gelberg (V)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Joshua Pelleg (J)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Daniel A Grave (DA)

Department of Materials Engineering, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.
Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer Sheva 8410500, Israel.

Classifications MeSH