Tunable asymmetric magnetoresistance in an Fe

Journal

Nanoscale
ISSN: 2040-3372
Titre abrégé: Nanoscale
Pays: England
ID NLM: 101525249

Informations de publication

Date de publication:
14 Dec 2023
Historique:
medline: 29 11 2023
pubmed: 29 11 2023
entrez: 29 11 2023
Statut: epublish

Résumé

van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe

Identifiants

DOI: 10.1039/d3nr04069k PMID: 38018435
pubmed: 38018435
doi: 10.1039/d3nr04069k
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

19480-19485

Auteurs

Xiangyu Zeng (X)

Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China. xdliuyan@xidian.edu.cn.
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Ge Ye (G)

Center for correlated matter and Department of Physics, Zhejiang University, Hangzhou, 310027, China.

Fazhi Yang (F)

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Qikai Ye (Q)

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. xw224@zju.edu.cn.

Liang Zhang (L)

Research Center for Humanoid Sensing and Perception, Zhejiang Lab, Hangzhou, 311100, China.

Boyang Ma (B)

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. xw224@zju.edu.cn.

Yulu Liu (Y)

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. xw224@zju.edu.cn.

Mengwei Xie (M)

Center for correlated matter and Department of Physics, Zhejiang University, Hangzhou, 310027, China.

Yan Liu (Y)

Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China. xdliuyan@xidian.edu.cn.
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Xiaozhi Wang (X)

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China. xw224@zju.edu.cn.
ORCID: 0000-0002-4290-9023

Yue Hao (Y)

Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China. xdliuyan@xidian.edu.cn.
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Genquan Han (G)

Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China. xdliuyan@xidian.edu.cn.
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Classifications MeSH