Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene.

borophene density functional theory electronic band replication nanograting photoelectron spectroscopy scanning tunneling spectroscopy

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
02 Dec 2023
Historique:
medline: 2 12 2023
pubmed: 2 12 2023
entrez: 2 12 2023
Statut: aheadofprint

Résumé

A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

Identifiants

pubmed: 38041641
doi: 10.1021/acsami.3c14884
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Sherif Kamal (S)

Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia.

Insung Seo (I)

Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan.

Pantelis Bampoulis (P)

Physics of Interfaces and Nanomaterials, MESA+ Institute, University of Twente, 7522 NB Enschede, The Netherlands.
Institute of Physics II, University of Cologne, 50937 Cologne, Germany.

Matteo Jugovac (M)

Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy.

Carlo Alberto Brondin (CA)

Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, 30172 Venice, Italy.

Tevfik Onur Menteş (TO)

Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy.

Iva Šarić Janković (I)

Faculty of Physics and Centre for Micro- and Nanosciences and Technologies, University of Rijeka, 51000 Rijeka, Croatia.

Andrey V Matetskiy (AV)

Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy.

Paolo Moras (P)

Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy.

Polina M Sheverdyaeva (PM)

Istituto di Struttura della Materia-CNR (ISM-CNR), S.S. 14 km 163.5, 34149 Trieste, Italy.

Thomas Michely (T)

Institute of Physics II, University of Cologne, 50937 Cologne, Germany.

Andrea Locatelli (A)

Elettra─Sincrotrone Trieste S.C.p.A., S.S. 14 km 163.5, 34149 Trieste, Italy.

Yoshihiro Gohda (Y)

Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan.

Marko Kralj (M)

Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia.

Marin Petrović (M)

Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia.

Classifications MeSH