Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides.


Journal

Langmuir : the ACS journal of surfaces and colloids
ISSN: 1520-5827
Titre abrégé: Langmuir
Pays: United States
ID NLM: 9882736

Informations de publication

Date de publication:
04 Dec 2023
Historique:
medline: 4 12 2023
pubmed: 4 12 2023
entrez: 4 12 2023
Statut: aheadofprint

Résumé

Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.

Identifiants

pubmed: 38047629
doi: 10.1021/acs.langmuir.3c02929
doi:

Types de publication

Journal Article Review

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Pragati A Shinde (PA)

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.

Katsuhiko Ariga (K)

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.

Classifications MeSH