Plasma Treatment for Achieving Oxygen Substitution in Layered MoS

MIR photoresponse layered MoS2 oxygen plasma treatment room temperature single-detector scanning imaging

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
06 Dec 2023
Historique:
medline: 6 12 2023
pubmed: 6 12 2023
entrez: 6 12 2023
Statut: aheadofprint

Résumé

Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS

Identifiants

DOI: 10.1021/acsami.3c11962 PMID: 38054246
pubmed: 38054246
doi: 10.1021/acsami.3c11962
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Jiahao Wu (J)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
ORCID: 0000-0001-8548-6262

Shasha Li (S)

School of Integrated Circuits, Sun Yat-Sen University, Shenzhen 518107, People's Republic of China.

Ximiao Wang (X)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.

Yuan Huang (Y)

School of Microelectronics Science and Technology, Sun Yat-Sen University, Zhuhai 519082, People's Republic of China.

Yifeng Huang (Y)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.

Huanjun Chen (H)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
ORCID: 0000-0003-4699-009X

Jun Chen (J)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
ORCID: 0000-0001-7397-2714

Juncong She (J)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
ORCID: 0000-0002-5483-3636

Shaozhi Deng (S)

State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China.
ORCID: 0000-0003-1830-2026

Classifications MeSH