Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging.

bioluminescence imaging computed tomography fluorescence imaging medical imaging optical coherence tomography photodetectors positron emission tomography single-photon emission computed tomography time-of-flight positron emission tomography

Journal

Nanomaterials (Basel, Switzerland)
ISSN: 2079-4991
Titre abrégé: Nanomaterials (Basel)
Pays: Switzerland
ID NLM: 101610216

Informations de publication

Date de publication:
04 Dec 2023
Historique:
received: 15 11 2023
revised: 01 12 2023
accepted: 03 12 2023
medline: 8 12 2023
pubmed: 8 12 2023
entrez: 8 12 2023
Statut: epublish

Résumé

Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes.

Identifiants

pubmed: 38063774
pii: nano13233078
doi: 10.3390/nano13233078
pmc: PMC10707864
pii:
doi:

Types de publication

Journal Article Review

Langues

eng

Subventions

Organisme : Ministry of Science and Higher Education of the Russian Federation
ID : FSWM-2020-0048

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Auteurs

Kirill A Lozovoy (KA)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Rahaf M H Douhan (RMH)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Vladimir V Dirko (VV)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Hazem Deeb (H)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Kristina I Khomyakova (KI)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Olzhas I Kukenov (OI)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Arseniy S Sokolov (AS)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Nataliya Yu Akimenko (NY)

Department of Engineering Systems and Technosphere Safety, Pacific National University, Tihookeanskaya St. 136, 680035 Khabarovsk, Russia.

Andrey P Kokhanenko (AP)

Department of Quantum Electronics and Photonics, Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.

Classifications MeSH