Synthesis of a Stable and High-Concentration BaHf

barium titanate ceramics lead-free piezoelectricity sol–gel synthesis

Journal

Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929

Informations de publication

Date de publication:
30 Nov 2023
Historique:
received: 27 10 2023
revised: 22 11 2023
accepted: 24 11 2023
medline: 9 12 2023
pubmed: 9 12 2023
entrez: 9 12 2023
Statut: epublish

Résumé

Lead-based materials are widely used in piezoceramics due to their high electromechanical properties. However, due to environmental protection and sustainable development, the use of the toxic element lead (Pb) in electronic devices is strictly restricted, therefore requiring the rapid development of piezoelectric-based devices with lead-free ceramics. In this context, a lead-free doped barium titanate was studied with a dual objective. First, a new sol-gel method to synthesize Hf

Identifiants

pubmed: 38068200
pii: ma16237452
doi: 10.3390/ma16237452
pmc: PMC10707173
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : Centre Val de Loire Region (France)
ID : APR n°201700117168

Références

Nanotechnology. 2011 Jun 24;22(25):254014
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IEEE Trans Ultrason Ferroelectr Freq Control. 2000;47(1):148-59
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IEEE Trans Ultrason Ferroelectr Freq Control. 2013 Jun;60(6):1272-6
pubmed: 25004492
IEEE Trans Ultrason Ferroelectr Freq Control. 1993;40(3):232-7
pubmed: 18263177

Auteurs

Damien Brault (D)

GREMAN UMR 7347, INSA-CVL, University of Tours, CNRS, 37200 Tours, France.

Thomas Richardot (T)

GREMAN UMR 7347, INSA-CVL, University of Tours, CNRS, 37200 Tours, France.
CEA, DAM, Le Ripault, 37260 Monts, France.

Philippe Boy (P)

CEA, DAM, Le Ripault, 37260 Monts, France.

Philippe Belleville (P)

CEA, DAM, Le Ripault, 37260 Monts, France.

Franck Levassort (F)

GREMAN UMR 7347, INSA-CVL, University of Tours, CNRS, 37200 Tours, France.

Maxime Bavencoffe (M)

GREMAN UMR 7347, INSA-CVL, University of Tours, CNRS, 37200 Tours, France.

Classifications MeSH