Salts as Additives: A Route to Improve Performance and Stability of n-Type Organic Electrochemical Transistors.


Journal

ACS materials Au
ISSN: 2694-2461
Titre abrégé: ACS Mater Au
Pays: United States
ID NLM: 9918300688806676

Informations de publication

Date de publication:
10 May 2023
Historique:
received: 15 11 2022
revised: 25 01 2023
accepted: 14 02 2023
medline: 13 12 2023
pubmed: 13 12 2023
entrez: 13 12 2023
Statut: epublish

Résumé

Organic electrochemical transistors (OECTs) are becoming increasingly ubiquitous in various applications at the interface with biological systems. However, their widespread use is hampered by the scarcity of electron-conducting (n-type) backbones and the poor performance and stability of the existing n-OECTs. Here, we introduce organic salts as a solution additive to improve the transduction capability, shelf life, and operational stability of n-OECTs. We demonstrate that the salt-cast devices present a 10-fold increase in transconductance and achieve at least one year-long stability, while the pristine devices degrade within four months of storage. The salt-added films show improved backbone planarity and greater charge delocalization, leading to higher electronic charge carrier mobility. These films show a distinctly porous morphology where the interconnectivity is affected by the salt type, responsible for OECT speed. The salt-based films display limited changes in morphology and show lower water uptake upon electrochemical doping, a possible reason for the improved device cycling stability. Our work provides a new and easy route to improve n-type OECT performance and stability, which can be adapted for other electrochemical devices with n-type films operating at the aqueous electrolyte interface.

Identifiants

pubmed: 38089129
doi: 10.1021/acsmaterialsau.2c00072
pmc: PMC10176614
doi:

Types de publication

Journal Article

Langues

eng

Pagination

242-254

Informations de copyright

© 2023 The Authors. Published by American Chemical Society.

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

Auteurs

David Ohayon (D)

Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Lucas Q Flagg (LQ)

Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States.

Andrea Giugni (A)

Department of Physics, Università degli Studi di Milano, Via Celoria 16, I-20133 Milano, Italy.

Shofarul Wustoni (S)

Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Ruipeng Li (R)

National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States.

Tania C Hidalgo Castillo (TC)

Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Abdul-Hamid Emwas (AH)

Core Laboratories, KAUST, Thuwal 23955-6900, Saudi Arabia.

Rajendar Sheelamanthula (R)

Physical Sciences and Engineering Division, KAUST, Thuwal 23955-6900, Saudi Arabia.

Iain McCulloch (I)

Physical Sciences and Engineering Division, KAUST, Thuwal 23955-6900, Saudi Arabia.
Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford OX1 3TA, United Kingdom.

Lee J Richter (LJ)

Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States.

Sahika Inal (S)

Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Classifications MeSH