A Novel Ferroelectric Rashba Semiconductor.
Angle-Resolved Photoemission Spectroscopy
Ferroelectricity
IV-VI compounds
Phase transition
Rashba spin texture
X-ray diffraction
Journal
Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095
Titre abrégé: Adv Mater
Pays: Germany
ID NLM: 9885358
Informations de publication
Date de publication:
15 Dec 2023
15 Dec 2023
Historique:
revised:
08
12
2023
received:
04
10
2023
medline:
15
12
2023
pubmed:
15
12
2023
entrez:
15
12
2023
Statut:
aheadofprint
Résumé
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb
Identifiants
pubmed: 38100676
doi: 10.1002/adma.202310278
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2310278Informations de copyright
This article is protected by copyright. All rights reserved.