Spatially coordinated heterochromatinization of long synaptic genes in fragile X syndrome.
CRISPR
DNA FISH
Hi-C
chromatin
epigenetics
fragile X syndrome
heterochromatin
higher-order genome folding
repeat expansion disorders
short tandem repeats
topologically associating domains
Journal
Cell
ISSN: 1097-4172
Titre abrégé: Cell
Pays: United States
ID NLM: 0413066
Informations de publication
Date de publication:
21 Dec 2023
21 Dec 2023
Historique:
received:
03
12
2022
revised:
31
07
2023
accepted:
16
11
2023
medline:
23
12
2023
pubmed:
23
12
2023
entrez:
22
12
2023
Statut:
ppublish
Résumé
Short tandem repeat (STR) instability causes transcriptional silencing in several repeat expansion disorders. In fragile X syndrome (FXS), mutation-length expansion of a CGG STR represses FMR1 via local DNA methylation. Here, we find megabase-scale H3K9me3 domains on autosomes and encompassing FMR1 on the X chromosome in FXS patient-derived iPSCs, iPSC-derived neural progenitors, EBV-transformed lymphoblasts, and brain tissue with mutation-length CGG expansion. H3K9me3 domains connect via inter-chromosomal interactions and demarcate severe misfolding of TADs and loops. They harbor long synaptic genes replicating at the end of S phase, replication-stress-induced double-strand breaks, and STRs prone to stepwise somatic instability. CRISPR engineering of the mutation-length CGG to premutation length reverses H3K9me3 on the X chromosome and multiple autosomes, refolds TADs, and restores gene expression. H3K9me3 domains can also arise in normal-length iPSCs created with perturbations linked to genome instability, suggesting their relevance beyond FXS. Our results reveal Mb-scale heterochromatinization and trans interactions among loci susceptible to instability.
Identifiants
pubmed: 38134876
pii: S0092-8674(23)01273-4
doi: 10.1016/j.cell.2023.11.019
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
5840-5858.e36Informations de copyright
Copyright © 2023 The Authors. Published by Elsevier Inc. All rights reserved.
Déclaration de conflit d'intérêts
Declaration of interests L.Z., C.G., and J.E.P.-C. are inventors on patent US20220323553A1 related to this work (https://patents.google.com/patent/US20220323553A1/en).