Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications.
RF
defects
field-effect transistors (FETs)
gallium oxide
high power
wide-bandgap semiconductor
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
18 Dec 2023
18 Dec 2023
Historique:
received:
30
10
2023
revised:
21
11
2023
accepted:
23
11
2023
medline:
23
12
2023
pubmed:
23
12
2023
entrez:
23
12
2023
Statut:
epublish
Résumé
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga
Identifiants
pubmed: 38138834
pii: ma16247693
doi: 10.3390/ma16247693
pii:
doi:
Types de publication
Journal Article
Review
Langues
eng
Subventions
Organisme : George Mason University
ID : Presidential Scholarship
Organisme : Virginia Microelectronics Consortium (VMEC)
ID : Chair Professorship