Tungsten Nitride (W

VLS growth atomic etch stop electrode semimetal tungsten nitride

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
27 Dec 2023
Historique:
medline: 27 12 2023
pubmed: 27 12 2023
entrez: 27 12 2023
Statut: aheadofprint

Résumé

Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W

Identifiants

pubmed: 38149785
doi: 10.1021/acs.nanolett.3c03243
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Hao-Ting Chin (HT)

Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan.
International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.

Deng-Chi Wang (DC)

Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.

Desman Perdamaian Gulo (DP)

Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.

Yu-Chi Yao (YC)

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Hao-Chen Yeh (HC)

Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.

Jeyavelan Muthu (J)

Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
International Graduate Program of Nano Science and Technology, National Taiwan University, Taipei 10617, Taiwan.

Ding-Rui Chen (DR)

Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan.
International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan.
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.

Tzu-Chun Kao (TC)

Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan.

Martin Kalbáč (M)

J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague, Czech Republic.

Ping-Hui Lin (PH)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300092, Taiwan.

Cheng-Maw Cheng (CM)

National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300092, Taiwan.

Mario Hofmann (M)

Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Chi-Te Liang (CT)

Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Hsiang-Lin Liu (HL)

Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan.

Feng-Chuan Chuang (FC)

Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.
Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan.
Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.

Ya-Ping Hsieh (YP)

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.

Classifications MeSH