Growth of Ga
ScAlMgO4 (0001) substrate
metalorganic vapor phase epitaxy
mixed-type dislocation
quantum wells
screw-type dislocation
sputtered-AlN buffer layer
Journal
Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929
Informations de publication
Date de publication:
28 Dec 2023
28 Dec 2023
Historique:
received:
20
11
2023
revised:
19
12
2023
accepted:
21
12
2023
medline:
11
1
2024
pubmed:
11
1
2024
entrez:
11
1
2024
Statut:
epublish
Résumé
This study attempted to improve the internal quantum efficiency (IQE) of 580 nm emitting Ga
Identifiants
pubmed: 38204021
pii: ma17010167
doi: 10.3390/ma17010167
pii:
doi:
Types de publication
Journal Article
Langues
eng