Fractional Quantum Hall State at Filling Factor ν=1/4 in Ultra-High-Quality GaAs Two-Dimensional Hole Systems.
Journal
Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141
Informations de publication
Date de publication:
29 Dec 2023
29 Dec 2023
Historique:
received:
24
07
2023
accepted:
01
12
2023
medline:
12
1
2024
pubmed:
12
1
2024
entrez:
12
1
2024
Statut:
ppublish
Résumé
Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors ν<1. Here, we report evidence for an even-denominator FQHS at ν=1/4 in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at ν=1/4, superimposed on a highly insulating background, suggesting a close competition between the ν=1/4 FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations that predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at ν=1/4. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.
Identifiants
pubmed: 38215363
doi: 10.1103/PhysRevLett.131.266502
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM