Nanoelectromechanical Control of Spin-Photon Interfaces in a Hybrid Quantum System on Chip.

color centers nanoelectromechanical systems nanophotonics quantum information

Journal

Nano letters
ISSN: 1530-6992
Titre abrégé: Nano Lett
Pays: United States
ID NLM: 101088070

Informations de publication

Date de publication:
16 Jan 2024
Historique:
medline: 16 1 2024
pubmed: 16 1 2024
entrez: 16 1 2024
Statut: aheadofprint

Résumé

Color centers (CCs) in nanostructured diamond are promising for optically linked quantum technologies. Scaling to useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of spin-dependent optical transitions; C3 coherent spin control; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. Here, we introduce an architecture that simultaneously achieves C1-C6. We realize piezoelectric strain control of diamond waveguide-coupled tin vacancy centers with ultralow power dissipation necessary. The DC response of our device allows emitter transition tuning by over 20 GHz, combined with low-power AC control. We show acoustic spin resonance of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing, our work opens a path to scalable single-qubit control with optically mediated entangling gates.

Identifiants

pubmed: 38227973
doi: 10.1021/acs.nanolett.3c04301
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Genevieve Clark (G)

The MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States.
Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Hamza Raniwala (H)

Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Matthew Koppa (M)

Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States.

Kevin Chen (K)

Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Andrew Leenheer (A)

Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States.

Matthew Zimmermann (M)

The MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States.

Mark Dong (M)

The MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States.
Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Linsen Li (L)

Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Y Henry Wen (YH)

The MITRE Corporation, 202 Burlington Road, Bedford, Massachusetts 01730, United States.

Daniel Dominguez (D)

Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, United States.

Matthew Trusheim (M)

Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.
DEVCOM, Army Research Laboratory, Adelphi, Maryland 20783, United States.

Gerald Gilbert (G)

The MITRE Corporation, 200 Forrestal Road, Princeton, New Jersey 08540, United States.

Matt Eichenfield (M)

College of Optical Sciences, University of Arizona, Tucson, Arizona 85719, United States.

Dirk Englund (D)

Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, Massachusetts 02139, United States.

Classifications MeSH