Nonlinear and Negative Effective Diffusivity of Interlayer Excitons in Moiré-Free Heterobilayers.


Journal

Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141

Informations de publication

Date de publication:
05 Jan 2024
Historique:
received: 03 08 2023
accepted: 10 11 2023
medline: 20 1 2024
pubmed: 20 1 2024
entrez: 19 1 2024
Statut: ppublish

Résumé

Interlayer exciton diffusion is studied in atomically reconstructed MoSe_{2}/WSe_{2} heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly polarized photoluminescence, and g-factor measurements. Using transient microscopy we observe propagation properties of interlayer excitons that are independent from trapping at moiré- or disorder-induced local potentials. Confirmed by characteristic temperature dependence for free particles, linear diffusion coefficients of interlayer excitons at liquid helium temperature and low excitation densities are almost 1000 times higher than in previous observations. We further show that exciton-exciton repulsion and annihilation contribute nearly equally to nonlinear propagation by disentangling the two processes in the experiment and simulations. Finally, we demonstrate effective shrinking of the light emission area over time across several hundreds of picoseconds at the transition from exciton- to the plasma-dominated regimes. Supported by microscopic calculations for band gap renormalization to identify the Mott threshold, this indicates transient crossing between rapidly expanding, short-lived electron-hole plasma and slower, long-lived exciton populations.

Identifiants

pubmed: 38242648
doi: 10.1103/PhysRevLett.132.016202
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

016202

Auteurs

Edith Wietek (E)

Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany.

Matthias Florian (M)

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.

Jonas Göser (J)

Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany.

Takashi Taniguchi (T)

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Kenji Watanabe (K)

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Alexander Högele (A)

Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany.
Munich Center for Quantum Science and Technology (MCQST), 80799 München, Germany.

Mikhail M Glazov (MM)

Ioffe Institute, 194021 Saint Petersburg, Russian Federation.

Alexander Steinhoff (A)

Institut für Theoretische Physik, Universität Bremen, 28334 Bremen, Germany.
Bremen Center for Computational Materials Science, Universität Bremen, 28334 Bremen, Germany.

Alexey Chernikov (A)

Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany.

Classifications MeSH