Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors.

Cooling is important for AlGaN/GaN high-electron mobility transistors (HEMTs) performance. In this paper, the advantages and disadvantages of the cooling performance of three cooling schemes: remote cooling (R-cool), near-chip cooling (NC-cool), and chip-embedded cooling (CE-cool) are compared. The influences of distinct geometric parameters and operating conditions on thermal resistance are investigated. The results show that the thermal resistances of NC-cool and CE-cool are almost the same as each other. Decreasing microchannel base thickness (