Thermo-optic epsilon-near-zero effects.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
26 Jan 2024
Historique:
received: 26 09 2023
accepted: 12 01 2024
medline: 27 1 2024
pubmed: 27 1 2024
entrez: 26 1 2024
Statut: epublish

Résumé

Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges for semiconductor-based ENZ performances. While their optical properties are temperature-sensitive, there is no systematic analysis on such crucial dependence. Here, we experimentally report the linear and nonlinear thermo-optic ENZ effects in indium tin oxide. We characterize its temperature-dependent optical properties with ENZ frequencies covering the telecommunication O-band, C-band, and 2-μm-band. Depending on the ENZ frequency, it exhibits an unprecedented 70-93-THz-broadband 660-955% enhancement over the conventional thermo-optic effect. The ENZ-induced fast-varying large group velocity dispersion up to 0.03-0.18 fs

Identifiants

pubmed: 38278795
doi: 10.1038/s41467-024-45054-z
pii: 10.1038/s41467-024-45054-z
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

794

Informations de copyright

© 2024. The Author(s).

Références

Reshef, O., De Leon, I., Alam, M. Z. & Boyd, R. W. Nonlinear optical effects in epsilon-near-zero media. Nat. Rev. Mater. 4, 535–551 (2019).
doi: 10.1038/s41578-019-0120-5
Kinsey, N., DeVault, C., Boltasseva, A. & Shalaev, V. M. Near-zero-index materials for photonics. Nat. Rev. Mater. 4, 742–760 (2019).
doi: 10.1038/s41578-019-0133-0
Wu, J., Xie, Z. T., Sha, Y. & Fu, H. Y. et al. Epsilon-near-zero photonics: infinite potentials. Photonics Res. 9, 1616 (2021).
doi: 10.1364/PRJ.427246
Niu, X., Hu, X., Chu, S. & Gong, Q. Epsilon-near-zero photonics: a new platform for integrated devices. Adv. Opt. Mater. 6, 1701292 (2018).
doi: 10.1002/adom.201701292
Silveirinha, M. & Engheta, N. Tunneling of electromagnetic energy through subwavelength channels and bends using ϵ-near-zero materials. Phys. Rev. Lett. 97, 157403 (2006).
pubmed: 17155357 doi: 10.1103/PhysRevLett.97.157403
Campione, S., de Ceglia, D., Vincenti, M. A. & Scalora, M. et al. Electric field enhancement in ϵ-near-zero slabs under tm-polarized oblique incidence. Phys. Rev. B 87, 035120 (2013).
doi: 10.1103/PhysRevB.87.035120
Alam, M. Z., De Leon, I. & Boyd, R. W. Large optical nonlinearity of indium tin oxide in its epsilon-near-zero region. Science 352, 795–797 (2016).
pubmed: 27127238 doi: 10.1126/science.aae0330
Alam, M. Z., Schulz, S. A., Upham, J. & De Leon, I. et al. Large optical nonlinearity of nanoantennas coupled to an epsilon-near-zero material. Nat. Photonics 12, 79–83 (2018).
doi: 10.1038/s41566-017-0089-9
Deng, J., Tang, Y., Chen, S. & Li, K. et al. Giant enhancement of second-order nonlinearity of epsilon-near-zero medium by a plasmonic metasurface. Nano Lett. 20, 5421–5427 (2020).
pubmed: 32496801 doi: 10.1021/acs.nanolett.0c01810
Zhai, T. & Zhang, X. Epsilon-near-zero metamaterials for tailoring ultrashort pulses. Appl. Phys. B 113, 185–189 (2013).
doi: 10.1007/s00340-013-5455-9
Wu, J., Malomed, B. A., Fu, H. Y. & Li, Q. Self-interaction of ultrashort pulses in an epsilon-near-zero nonlinear material at the telecom wavelength. Opt. Express 27, 37298–37306 (2019).
pubmed: 31878512 doi: 10.1364/OE.27.037298
Khurgin, J. B., Clerici, M., Bruno, V. & Caspani, L. et al. Adiabatic frequency shifting in epsilon-near-zero materials: the role of group velocity. Optica 7, 226 (2020).
doi: 10.1364/OPTICA.374788
Zhou, Y., Alam, M. Z., Karimi, M. & Upham, J. et al. Broadband frequency translation through time refraction in an epsilon-near-zero material. Nat. Commun. 11, 2180 (2020).
pubmed: 32358528 pmcid: 7195366 doi: 10.1038/s41467-020-15682-2
Liberal, I., Lobet, M., Li, Y. & Engheta, N. Near-zero-index media as electromagnetic ideal fluids. Proc. Natl Acad. Sci. USA 117, 24050–24054 (2020).
pubmed: 32913050 pmcid: 7533706 doi: 10.1073/pnas.2008143117
Li, H., Zhou, Z., Sun, W. & Lobet, M. et al. Direct observation of ideal electromagnetic fluids. Nat. Commun. 13, 4747 (2022).
pubmed: 35961975 pmcid: 9374703 doi: 10.1038/s41467-022-32187-2
Wu, J., Liu, X., Malomed, B. A. & Chang, K.-C. et al. Observation of squid-like behavior in fiber laser with intra-cavity epsilon-near-zero effect. Laser Photonics Rev. 16, 2200487 (2022).
doi: 10.1002/lpor.202200487
Tirole, R., Vezzoli, S., Galiffi, E. & Robertson, I. et al. Double-slit time diffraction at optical frequencies. Nat. Phys. 19, 999–1002 (2023).
doi: 10.1038/s41567-023-01993-w
Wood, M. G., Campione, S., Parameswaran, S. & Luk, T. S. et al. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators. Optica 5, 233 (2018).
doi: 10.1364/OPTICA.5.000233
Jia, W., Liu, M., Lu, Y. & Feng, X. et al. Broadband terahertz wave generation from an epsilon-near-zero material. Light.: Sci. Appl. 10, 11 (2021).
pubmed: 33414366 doi: 10.1038/s41377-020-00452-y
Minerbi, E., Sideris, S., Khurgin, J. B. & Ellenbogen, T. The role of epsilon near zero and hot electrons in enhanced dynamic thz emission from nonlinear metasurfaces. Nano Lett. 22, 6194–6199 (2022).
pubmed: 35899937 pmcid: 9373027 doi: 10.1021/acs.nanolett.2c01400
Capretti, A., Wang, Y., Engheta, N. & Dal Negro, L. Enhanced third-harmonic generation in si-compatible epsilon-near-zero indium tin oxide nanolayers. Opt. Lett. 40, 1500 (2015).
pubmed: 25831369 doi: 10.1364/OL.40.001500
Luk, T. S., de Ceglia, D., Liu, S. & Keeler, G. A. et al. Enhanced third harmonic generation from the epsilon-near-zero modes of ultrathin films. Appl. Phys. Lett. 106, 151103 (2015).
doi: 10.1063/1.4917457
Yang, Y., Lu, J., Manjavacas, A. & Luk, T. S. et al. High-harmonic generation from an epsilon-near-zero material. Nat. Phys. 15, 1022–1026 (2019).
doi: 10.1038/s41567-019-0584-7
Tian, W., Liang, F., Lu, D. & Yu, H. et al. Highly efficient ultraviolet high-harmonic generation from epsilon-near-zero indium tin oxide films. Photonics Res. 9, 317–323 (2021).
doi: 10.1364/PRJ.414570
Sinatkas, G., Pitilakis, A., Zografopoulos, D. C. & Beccherelli, R. et al. Transparent conducting oxide electro-optic modulators on silicon platforms: a comprehensive study based on the drift-diffusion semiconductor model. J. Appl. Phys. 121, 023109 (2017).
doi: 10.1063/1.4973896
Liu, X., Zang, K., Kang, J.-H. & Park, J. et al. Epsilon-near-zero si slot-waveguide modulator. ACS Photonics 5, 4484–4490 (2018).
doi: 10.1021/acsphotonics.8b00945
Sha, Y., Wu, J., Xie, Z. T. & Fu, H. Y. et al. Comparison study of multi-slot designs in epsilon-near-zero waveguide-based electro-optical modulators. IEEE Photonics J. 13, 1–12 (2021).
doi: 10.1109/JPHOT.2021.3084943
Jiang, X., Lu, H., Li, Q. & Zhou, H. et al. Epsilon-near-zero medium for optical switches in a monolithic waveguide chip at 1.9 μm. Nanophotonics 7, 1835–1843 (2018).
doi: 10.1515/nanoph-2018-0102
Swillam, M. A., Zaki, A. O., Kirah, K. & Shahada, L. A. On chip optical modulator using epsilon-near-zero hybrid plasmonic platform. Sci. Rep. 9, 6669 (2019).
pubmed: 31040294 pmcid: 6491601 doi: 10.1038/s41598-019-42675-z
Sha, Y., Xie, Z. T., Wu, J. & Fu, H. Y. et al. All-optical switching in epsilon-near-zero asymmetric directional coupler. Sci. Rep. 12, 17958 (2022).
pubmed: 36289304 pmcid: 9606007 doi: 10.1038/s41598-022-22573-7
Guo, Q., Cui, Y., Yao, Y. & Ye, Y. et al. A solution-processed ultrafast optical switch based on a nanostructured epsilon-near-zero medium. Adv. Mater. 29, 1700754 (2017).
doi: 10.1002/adma.201700754
Wu, Y., Hu, X., Wang, F. & Yang, J. et al. Ultracompact and unidirectional on-chip light source based on epsilon-near-zero materials in an optical communication range. Phys. Rev. Appl. 12, 054021 (2019).
doi: 10.1103/PhysRevApplied.12.054021
Ji, W., Luo, J., Chu, H. & Zhou, X. et al. Crosstalk prohibition at the deep-subwavelength scale by epsilon-near-zero claddings. Nanophotonics 12, 2007–2017 (2023).
doi: 10.1515/nanoph-2023-0085
Chen, Y.-K. & Kung, S. Y. Trend and challenge on system-on-a-chip designs. J. Signal Process. Syst. 53, 217–229 (2008).
doi: 10.1007/s11265-007-0129-7
Gui, Y., Miscuglio, M., Ma, Z. & Tahersima, M. H. et al. Towards integrated metatronics: a holistic approach on precise optical and electrical properties of indium tin oxide. Sci. Rep. 9, 11279 (2019).
pubmed: 31375787 pmcid: 6677887 doi: 10.1038/s41598-019-47631-5
Johns, B., Puthoor, N. M., Gopalakrishnan, H. & Mishra, A. et al. Epsilon-near-zero response in indium tin oxide thin films: Octave span tuning and ir plasmonics. J. Appl. Phys. 127, 043102 (2020).
doi: 10.1063/1.5128873
Wang, H., Dai, X., Du, K. & Gao, K. et al. Tuning epsilon-near-zero wavelength of indium tin oxide film via annealing. J. Phys. D: Appl. Phys. 53, 225108 (2020).
doi: 10.1088/1361-6463/ab78d8
Wu, J., Liu, X., Fu, H. & Chang, K.-C. et al. Manipulation of epsilon-near-zero wavelength for the optimization of linear and nonlinear absorption by supercritical fluid. Sci. Rep. 11, 15936 (2021).
pubmed: 34354198 pmcid: 8342460 doi: 10.1038/s41598-021-95513-6
Drude, P. Zur elektronentheorie der metalle. Ann. Phys. 306, 566–613 (1900).
doi: 10.1002/andp.19003060312
Xian, S., Nie, L., Qin, J. & Kang, T. et al. Effect of oxygen stoichiometry on the structure, optical and epsilon-near-zero properties of indium tin oxide films. Opt. Express 27, 28618 (2019).
pubmed: 31684610 doi: 10.1364/OE.27.028618
Lotkov, E. S., Baburin, A. S., Ryzhikov, I. A. & Sorokina, O. S. et al. Ito film stack engineering for low-loss silicon optical modulators. Sci. Rep. 12, 6321 (2022).
pubmed: 35428848 pmcid: 9012746 doi: 10.1038/s41598-022-09973-5
Huang, C., Peng, S., Liu, X. & Wu, J. et al. Manufacturing-enabled tunability of linear and nonlinear epsilon-near-zero properties in indium tin oxide nanofilms. ACS Appl. Mater. Interfaces 15, 35186–35195 (2023).
pubmed: 37449495 doi: 10.1021/acsami.3c06270
Wu, J., Clementi, M., Nitiss, E. & Hu, J. et al. Bright and dark talbot pulse trains on a chip. Commun. Phys. 6, 249 (2023).
doi: 10.1038/s42005-023-01375-x
Morris, J. E., Ridge, M. I., Bishop, C. A. & Howson, R. P. Temperature dependence of hall mobility in indium-tin oxide thin films. J. Appl. Phys. 51, 1847–1849 (1980).
doi: 10.1063/1.327756
Tuna, O., Selamet, Y., Aygun, G. & Ozyuzer, L. High quality ito thin films grown by dc and rf sputtering without oxygen. J. Phys. D 43, 055402 (2010).
doi: 10.1088/0022-3727/43/5/055402
Ristić, D., Guddala, S., Chiappini, A. & Alombert Goget, G. et al. Thermo optical coefficient of tin-oxide films measured by ellipsometry. J. Appl. Phys. 118, 215306 (2015).
doi: 10.1063/1.4937146
Boyd, R. W. Nonlinear Optics (Academic Press, 2020), 4 edn.
Kelly, P. & Kuznetsova, L. Pulse shaping in the presence of enormous second-order dispersion in al:zno/zno epsilon-near-zero metamaterial. Appl. Phys. B 124, 60 (2018).
doi: 10.1007/s00340-018-6929-6
Wu, J., Xie, Z. T., Sha, Y. & Fu, H. Y. et al. Comparative study on epsilon-near-zero transparent conducting oxides: High-order chromatic dispersions and modeling of ultrashort pulse interactions. Phys. Rev. A 102, 053503 (2020).
doi: 10.1103/PhysRevA.102.053503
Vassant, S., Hugonin, J.-P., Marquier, F. & Greffet, J.-J. Berreman mode and epsilon near zero mode. Opt. Express 20, 23971 (2012).
pubmed: 23188363 doi: 10.1364/OE.20.023971
Reshef, O. et al. Beyond the perturbative description of the nonlinear optical response of low-index materials. Opt. Lett. 42, 3225 (2017).
pubmed: 28809914 doi: 10.1364/OL.42.003225
Thuau, D., Koymen, I. & Cheung, R. A microstructure for thermal conductivity measurement of conductive thin films. Microelectron. Eng. 88, 2408–2412 (2011).
doi: 10.1016/j.mee.2010.12.119
Secondo, R., Khurgin, J. & Kinsey, N. Absorptive loss and band non-parabolicity as a physical origin of large nonlinearity in epsilon-near-zero materials. Opt. Mater. Express 10, 1545 (2020).
doi: 10.1364/OME.394111
Arbabi, A. & Goddard, L. L. Measurements of the refractive indices and thermo-optic coefficients of si
pubmed: 24081076 doi: 10.1364/OL.38.003878
Khurgin, J. B., Sun, G., Chen, W. T. & Tsai, W.-Y. et al. Ultrafast thermal nonlinearity. Sci. Rep. 5, 17899 (2015).
pubmed: 26644322 pmcid: 4672269 doi: 10.1038/srep17899
Sarkar, S., Un, I. W. & Sivan, Y. Electronic and thermal response of low-electron-density drude materials to ultrafast optical illumination. Phys. Rev. Appl. 19, 014005 (2023).
doi: 10.1103/PhysRevApplied.19.014005
Olson, D. H., Rost, C. M., Gaskins, J. T. & Szwejkowski, C. J. et al. Size effects on the cross-plane thermal conductivity of transparent conducting indium tin oxide and fluorine tin oxide thin films. IEEE Trans. Compon. Packag. Manuf. Technol. 9, 51–57 (2019).
doi: 10.1109/TCPMT.2018.2863648
Ma, J., Qin, J., Campbell, G. T. & Lecamwasam, R. et al. Photothermally induced transparency. Sci. Adv. 6, eaax8256 (2020).
pubmed: 32128396 pmcid: 7034986 doi: 10.1126/sciadv.aax8256
Clementi, M., Iadanza, S., Schulz, S. A. & Urbinati, G. et al. Thermo-optically induced transparency on a photonic chip. Light.: Sci. Appl. 10, 240 (2021).
pubmed: 34862362 doi: 10.1038/s41377-021-00678-4
Clementi, M., Galli, M., O’Faolain, L. & Gerace, D. Electromagnetically induced transparency from first-order dynamical systems. Phys. Rev. B 104, 205434 (2021).
doi: 10.1103/PhysRevB.104.205434

Auteurs

Jiaye Wu (J)

École Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEM, Station 11, Lausanne, CH-1015, Switzerland. jiaye.wu@epfl.ch.

Marco Clementi (M)

École Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEM, Station 11, Lausanne, CH-1015, Switzerland.

Chenxingyu Huang (C)

School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.
Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China.

Feng Ye (F)

School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.

Hongyan Fu (H)

Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China.

Lei Lu (L)

School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.

Shengdong Zhang (S)

School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.

Qian Li (Q)

School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China. liqian@pkusz.edu.cn.

Camille-Sophie Brès (CS)

École Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEM, Station 11, Lausanne, CH-1015, Switzerland. camille.bres@epfl.ch.

Classifications MeSH