Probing electron-hole Coulomb correlations in the exciton landscape of a twisted semiconductor heterostructure.


Journal

Science advances
ISSN: 2375-2548
Titre abrégé: Sci Adv
Pays: United States
ID NLM: 101653440

Informations de publication

Date de publication:
09 Feb 2024
Historique:
medline: 7 2 2024
pubmed: 7 2 2024
entrez: 7 2 2024
Statut: ppublish

Résumé

In two-dimensional semiconductors, cooperative and correlated interactions determine the material's excitonic properties and can even lead to the creation of correlated states of matter. Here, we study the fundamental two-particle correlated exciton state formed by the Coulomb interaction between single-particle holes and electrons. We find that the ultrafast transfer of an exciton's hole across a type II band-aligned semiconductor heterostructure leads to an unexpected sub-200-femtosecond upshift of the single-particle energy of the electron being photoemitted from the two-particle exciton state. While energy relaxation usually leads to an energetic downshift of the spectroscopic signature, we show that this upshift is a clear fingerprint of the correlated interaction of the electron and hole parts of the exciton. In this way, time-resolved photoelectron spectroscopy is straightforwardly established as a powerful method to access electron-hole correlations and cooperative behavior in quantum materials. Our work highlights this capability and motivates the future study of optically inaccessible correlated excitonic and electronic states of matter.

Identifiants

pubmed: 38324690
doi: 10.1126/sciadv.adi1323
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

eadi1323

Auteurs

Jan Philipp Bange (JP)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

David Schmitt (D)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Wiebke Bennecke (W)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Giuseppe Meneghini (G)

Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany.

AbdulAziz AlMutairi (A)

Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.

Kenji Watanabe (K)

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Takashi Taniguchi (T)

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

Daniel Steil (D)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Sabine Steil (S)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

R Thomas Weitz (RT)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
International Center for Advanced Studies of Energy Conversion (ICASEC), University of Göttingen, Göttingen, Germany.

G S Matthijs Jansen (GSM)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Stephan Hofmann (S)

Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.

Samuel Brem (S)

Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany.

Ermin Malic (E)

Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany.
Department of Physics, Chalmers University of Technology, Gothenburg, Sweden.

Marcel Reutzel (M)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.

Stefan Mathias (S)

I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
International Center for Advanced Studies of Energy Conversion (ICASEC), University of Göttingen, Göttingen, Germany.

Classifications MeSH