Ultrahigh Photoresponsivity of W/Graphene/β-Ga
LRGT
Schottky barrier diode
graphene
photodetector
photodiode
β-Ga2O3
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
09 Feb 2024
09 Feb 2024
Historique:
medline:
9
2
2024
pubmed:
9
2
2024
entrez:
9
2
2024
Statut:
aheadofprint
Résumé
The integration of graphene with semiconductor materials has been studied for developing advanced electronic and optoelectronic devices. Here, we propose ultrahigh photoresponsivity of β-Ga
Identifiants
pubmed: 38334310
doi: 10.1021/acsnano.3c12415
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM