Quantum Efficiency Measurement and Modeling of Silicon Sensors Optimized for Soft X-ray Detection.
entrance window
quantum efficiency
soft X-ray sensors
Journal
Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366
Informations de publication
Date de publication:
31 Jan 2024
31 Jan 2024
Historique:
received:
30
11
2023
revised:
19
01
2024
accepted:
22
01
2024
medline:
10
2
2024
pubmed:
10
2
2024
entrez:
10
2
2024
Statut:
epublish
Résumé
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, and large area. However, at energies below 3 keV, the detector performance is often limited because of the poor quantum efficiency of the sensor and the difficulty in achieving single-photon resolution due to the low signal-to-noise ratio. In this paper, we address the quantum efficiency of silicon sensors by refining the design of the entrance window, mainly by passivating the silicon surface and optimizing the dopant profile of the n
Identifiants
pubmed: 38339659
pii: s24030942
doi: 10.3390/s24030942
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : European Union
ID : 884104
Organisme : Swiss Nanoscience Institute