Framework of compressive sensing and data compression for 4D-STEM.

4D-STEM Compressive sensing Data compression Strain mapping

Journal

Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702

Informations de publication

Date de publication:
10 Feb 2024
Historique:
received: 10 08 2023
revised: 28 01 2024
accepted: 08 02 2024
medline: 16 2 2024
pubmed: 16 2 2024
entrez: 15 2 2024
Statut: aheadofprint

Résumé

Four-dimensional Scanning Transmission Electron Microscopy (4D-STEM) is a powerful technique for high-resolution and high-precision materials characterization at multiple length scales, including the characterization of beam-sensitive materials. However, the field of view of 4D-STEM is relatively small, which in absence of live processing is limited by the data size required for storage. Furthermore, the rectilinear scan approach currently employed in 4D-STEM places a resolution- and signal-dependent dose limit for the study of beam sensitive materials. Improving 4D-STEM data and dose efficiency, by keeping the data size manageable while limiting the amount of electron dose, is thus critical for broader applications. Here we introduce a general method for reconstructing 4D-STEM data with subsampling in both real and reciprocal spaces at high fidelity. The approach is first tested on the subsampled datasets created from a full 4D-STEM dataset, and then demonstrated experimentally using random scan in real-space. The same reconstruction algorithm can also be used for compression of 4D-STEM datasets, leading to a large reduction (100 times or more) in data size, while retaining the fine features of 4D-STEM imaging, for crystalline samples.

Identifiants

pubmed: 38359632
pii: S0304-3991(24)00017-2
doi: 10.1016/j.ultramic.2024.113938
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

113938

Informations de copyright

Copyright © 2024 The Author(s). Published by Elsevier B.V. All rights reserved.

Déclaration de conflit d'intérêts

Declaration of competing interest The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Hsu-Chih Ni reports financial support was provided by Intel Corp.

Auteurs

Hsu-Chih Ni (HC)

Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA; Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Renliang Yuan (R)

Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124, USA.

Jiong Zhang (J)

Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124, USA.

Jian-Min Zuo (JM)

Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA; Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA. Electronic address: jianzuo@illinois.edu.

Classifications MeSH