Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles.
Polymer light-emitting diodes
charge trap dynamics
device physics
electron trap
semiconducting polymer
Journal
Science and technology of advanced materials
ISSN: 1468-6996
Titre abrégé: Sci Technol Adv Mater
Pays: United States
ID NLM: 101614420
Informations de publication
Date de publication:
2024
2024
Historique:
medline:
16
2
2024
pubmed:
16
2
2024
entrez:
16
2
2024
Statut:
epublish
Résumé
Already in 2012, Blom et al. reported (Nature Materials 2012, Formation of universal electron traps in polymer light-emitting diodes is a dynamic process that occurs via a slow triple-encounter between trap precursor species, with the water-oxygen [2(H
Autres résumés
Type: plain-language-summary
(eng)
Formation of universal electron traps in polymer light-emitting diodes is a dynamic process that occurs via a slow triple-encounter between trap precursor species, with the water-oxygen [2(H
Identifiants
pubmed: 38361531
doi: 10.1080/14686996.2024.2312148
pii: 2312148
pmc: PMC10868412
doi:
Types de publication
Journal Article
Langues
eng
Pagination
2312148Informations de copyright
© 2024 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.
Déclaration de conflit d'intérêts
No potential conflict of interest was reported by the author(s).