Programming memristor arrays with arbitrarily high precision for analog computing.


Journal

Science (New York, N.Y.)
ISSN: 1095-9203
Titre abrégé: Science
Pays: United States
ID NLM: 0404511

Informations de publication

Date de publication:
23 Feb 2024
Historique:
medline: 22 2 2024
pubmed: 22 2 2024
entrez: 22 2 2024
Statut: ppublish

Résumé

In-memory computing represents an effective method for modeling complex physical systems that are typically challenging for conventional computing architectures but has been hindered by issues such as reading noise and writing variability that restrict scalability, accuracy, and precision in high-performance computations. We propose and demonstrate a circuit architecture and programming protocol that converts the analog computing result to digital at the last step and enables low-precision analog devices to perform high-precision computing. We use a weighted sum of multiple devices to represent one number, in which subsequently programmed devices are used to compensate for preceding programming errors. With a memristor system-on-chip, we experimentally demonstrate high-precision solutions for multiple scientific computing tasks while maintaining a substantial power efficiency advantage over conventional digital approaches.

Identifiants

pubmed: 38386733
doi: 10.1126/science.adi9405
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

903-910

Commentaires et corrections

Type : CommentIn

Auteurs

Wenhao Song (W)

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
TetraMem Inc., Fremont, CA, USA.

Mingyi Rao (M)

TetraMem Inc., Fremont, CA, USA.

Yunning Li (Y)

Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.

Can Li (C)

Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.

Ye Zhuo (Y)

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.

Fuxi Cai (F)

TetraMem Inc., Fremont, CA, USA.

Mingche Wu (M)

TetraMem Inc., Fremont, CA, USA.

Wenbo Yin (W)

TetraMem Inc., Fremont, CA, USA.

Zongze Li (Z)

TetraMem Inc., Fremont, CA, USA.

Qiang Wei (Q)

TetraMem Inc., Fremont, CA, USA.

Sangsoo Lee (S)

TetraMem Inc., Fremont, CA, USA.

Hengfang Zhu (H)

TetraMem Inc., Fremont, CA, USA.

Lei Gong (L)

TetraMem Inc., Fremont, CA, USA.

Mark Barnell (M)

Air Force Research Lab, Information Directorate, Rome, NY, USA.

Qing Wu (Q)

Air Force Research Lab, Information Directorate, Rome, NY, USA.

Peter A Beerel (PA)

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.

Mike Shuo-Wei Chen (MS)

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.

Ning Ge (N)

TetraMem Inc., Fremont, CA, USA.

Miao Hu (M)

TetraMem Inc., Fremont, CA, USA.

Qiangfei Xia (Q)

TetraMem Inc., Fremont, CA, USA.
Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.

J Joshua Yang (JJ)

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
TetraMem Inc., Fremont, CA, USA.
Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, USA.

Classifications MeSH