Postfabrication Tuning of Circular Bragg Resonators for Enhanced Emitter-Cavity Coupling.


Journal

ACS photonics
ISSN: 2330-4022
Titre abrégé: ACS Photonics
Pays: United States
ID NLM: 101634366

Informations de publication

Date de publication:
21 Feb 2024
Historique:
received: 12 10 2023
revised: 25 12 2023
accepted: 29 12 2023
medline: 26 2 2024
pubmed: 26 2 2024
entrez: 26 2 2024
Statut: epublish

Résumé

Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum light with high brightness and low multiphoton probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate an ∼16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.

Identifiants

pubmed: 38405396
doi: 10.1021/acsphotonics.3c01480
pmc: PMC10885778
doi:

Types de publication

Journal Article

Langues

eng

Pagination

596-603

Informations de copyright

© 2024 The Authors. Published by American Chemical Society.

Déclaration de conflit d'intérêts

The authors declare no competing financial interest.

Auteurs

Tobias M Krieger (TM)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Christian Weidinger (C)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Thomas Oberleitner (T)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Gabriel Undeutsch (G)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Michele B Rota (MB)

Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.

Naser Tajik (N)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Maximilian Aigner (M)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Quirin Buchinger (Q)

Lehrstuhl für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

Christian Schimpf (C)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Ailton J Garcia (AJ)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Saimon F Covre da Silva (SF)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Sven Höfling (S)

Lehrstuhl für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

Tobias Huber-Loyola (T)

Lehrstuhl für Technische Physik, Physikalisches Institut, Julius-Maximilians-Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.

Rinaldo Trotta (R)

Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.

Armando Rastelli (A)

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040 Linz, Austria.

Classifications MeSH