Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
26 Feb 2024
Historique:
received: 30 08 2023
accepted: 23 01 2024
medline: 27 2 2024
pubmed: 27 2 2024
entrez: 26 2 2024
Statut: epublish

Résumé

The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic topological spin textures as information carriers. This shift is primarily owing to their negligible stray fields, leading to higher possible device density and potentially ultrafast dynamics. We realize in this work such chiral in-plane topological antiferromagnetic spin textures namely merons, antimerons, and bimerons in synthetic antiferromagnets by concurrently engineering the effective perpendicular magnetic anisotropy, the interlayer exchange coupling, and the magnetic compensation ratio. We demonstrate multimodal vector imaging of the three-dimensional Néel order parameter, revealing the topology of those spin textures and a globally well-defined chirality, which is a crucial requirement for controlled current-induced dynamics. Our analysis reveals that the interplay between interlayer exchange and interlayer magnetic dipolar interactions plays a key role to significantly reduce the critical strength of the Dzyaloshinskii-Moriya interaction required to stabilize topological spin textures, such as antiferromagnetic merons, in synthetic antiferromagnets, making them a promising platform for next-generation spintronics applications.

Identifiants

pubmed: 38409221
doi: 10.1038/s41467-024-45375-z
pii: 10.1038/s41467-024-45375-z
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

1641

Informations de copyright

© 2024. The Author(s).

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Auteurs

Mona Bhukta (M)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.

Takaaki Dohi (T)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany. tdohi@tohoku.ac.jp.
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan. tdohi@tohoku.ac.jp.

Venkata Krishna Bharadwaj (VK)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.

Ricardo Zarzuela (R)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.

Maria-Andromachi Syskaki (MA)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.
Singulus Technologies AG, Hanauer Landstrasse 107, 63796, Kahl am Main, Germany.

Michael Foerster (M)

ALBA Synchrotron Light Facility, 08290, Cerdanyola del Vallés, Barcelona, Spain.

Miguel Angel Niño (MA)

ALBA Synchrotron Light Facility, 08290, Cerdanyola del Vallés, Barcelona, Spain.

Jairo Sinova (J)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany.

Robert Frömter (R)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany. froemter@uni-mainz.de.

Mathias Kläui (M)

Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany. klaeui@uni-mainz.de.

Classifications MeSH