High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors.
current saturation
indium selenide
mobility
optical phonon
saturation velocity
Journal
ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589
Informations de publication
Date de publication:
19 Mar 2024
19 Mar 2024
Historique:
medline:
7
3
2024
pubmed:
7
3
2024
entrez:
7
3
2024
Statut:
ppublish
Résumé
Creating a high-frequency electron system demands a high saturation velocity (υ
Identifiants
pubmed: 38451218
doi: 10.1021/acsnano.3c11613
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM