Adsorption Behavior of NO and NO

constituent materials first-principles computations gas adsorption two-dimensional materials

Journal

Materials (Basel, Switzerland)
ISSN: 1996-1944
Titre abrégé: Materials (Basel)
Pays: Switzerland
ID NLM: 101555929

Informations de publication

Date de publication:
23 Feb 2024
Historique:
received: 02 01 2024
revised: 07 02 2024
accepted: 09 02 2024
medline: 13 3 2024
pubmed: 13 3 2024
entrez: 13 3 2024
Statut: epublish

Résumé

To address the most significant environmental challenges, the quest for high-performance gas sensing materials is crucial. Among numerous two-dimensional materials, this study investigates the gas-sensitive capabilities of monolayer As, Sb, and Bi materials. To compare the gas detection abilities of these three materials, we employ first-principles calculations to comprehensively study the adsorption behavior of NO and NO

Identifiants

pubmed: 38473496
pii: ma17051024
doi: 10.3390/ma17051024
pii:
doi:

Types de publication

Journal Article

Langues

eng

Subventions

Organisme : National Natural Science Foundation of China
ID : 62074018
Organisme : National Natural Science Foundation of China
ID : 62174015
Organisme : National Natural Science Foundation of China
ID : 62275032
Organisme : National Key R&D Program of China
ID : No. 2021YFB3201901
Organisme : Developing Project of Science and Technology of Jilin Province
ID : 20210509061RQ
Organisme : Natural Science Foundation of Jilin Province
ID : 20210101150JC
Organisme : Natural Science Foundation of Jilin Province
ID : 20210101473JC
Organisme : Natural Science Foundation of Chongqing China
ID : cstc2021jcyjmsxmX1060

Auteurs

Yuting Zhang (Y)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Xi Chen (X)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Dan Fang (D)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Hao Yan (H)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Dengkui Wang (D)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Xiaohua Wang (X)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Jinhua Li (J)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Yingjiao Zhai (Y)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Xueying Chu (X)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Dongbo Wang (D)

Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.

Hongbin Zhao (H)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, China.

Xuan Fang (X)

State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.

Classifications MeSH