New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe
Journal
The journal of physical chemistry. C, Nanomaterials and interfaces
ISSN: 1932-7447
Titre abrégé: J Phys Chem C Nanomater Interfaces
Pays: United States
ID NLM: 101299949
Informations de publication
Date de publication:
07 Mar 2024
07 Mar 2024
Historique:
received:
18
01
2024
revised:
16
02
2024
accepted:
20
02
2024
medline:
13
3
2024
pubmed:
13
3
2024
entrez:
13
3
2024
Statut:
epublish
Résumé
We present a theoretical model to compute the efficiency of the generation of two or more electron-hole pairs in a semiconductor by the absorption of one photon via the process of carrier multiplication (CM). The photogeneration quantum yield of electron-hole pairs is calculated from the number of possible CM decay pathways of the electron and the hole. We apply our model to investigate the underlying cause of the high efficiency of CM in bulk 2H-MoTe
Identifiants
pubmed: 38476826
doi: 10.1021/acs.jpcc.4c00383
pmc: PMC10926152
doi:
Types de publication
Journal Article
Langues
eng
Pagination
3693-3702Informations de copyright
© 2024 The Authors. Published by American Chemical Society.
Déclaration de conflit d'intérêts
The authors declare no competing financial interest.