Button shear testing for adhesion measurements of 2D materials.


Journal

Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555

Informations de publication

Date de publication:
18 Mar 2024
Historique:
received: 09 09 2023
accepted: 15 02 2024
medline: 19 3 2024
pubmed: 19 3 2024
entrez: 19 3 2024
Statut: epublish

Résumé

Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.

Identifiants

pubmed: 38499534
doi: 10.1038/s41467-024-46136-8
pii: 10.1038/s41467-024-46136-8
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

2430

Subventions

Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : 03XP0210F
Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : 16ME0399
Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : 03ZU1106AA
Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : 16ME0403
Organisme : Bundesministerium für Bildung und Forschung (Federal Ministry of Education and Research)
ID : 03XP0210A
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : 881603
Organisme : EC | Horizon 2020 Framework Programme (EU Framework Programme for Research and Innovation H2020)
ID : 881603

Informations de copyright

© 2024. The Author(s).

Références

Neumaier, D., Pindl, S. & Lemme, M. C. Integrating graphene into semiconductor fabrication lines. Nat. Mater. 18, 525–529 (2019).
pubmed: 31114067 doi: 10.1038/s41563-019-0359-7
Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).
pubmed: 31554977 doi: 10.1038/s41586-019-1573-9
Lemme, M. C., Akinwande, D., Huyghebaert, C. & Stampfer, C. 2D materials for future heterogeneous electronics. Nat. Commun. 13, 1392 (2022).
pubmed: 35296657 pmcid: 8927416 doi: 10.1038/s41467-022-29001-4
Asselberghs, I. et al. Scaled transistors with 2D materials from the 300mm fab. in 2020 IEEE Silicon Nanoelectronics Workshop (SNW) 67–68 (IEEE, Honolulu, HI, USA, 2020). https://doi.org/10.1109/SNW50361.2020.9131651 .
Zhai, Y. et al. Fabrication of graphene nanomesh FET terahertz detector. Micromachines 12, 641 (2021).
pubmed: 34072666 pmcid: 8228063 doi: 10.3390/mi12060641
Quellmalz, A. et al. Large-area integration of two-dimensional materials and their heterostructures by wafer bonding. Nat. Commun. 12, 917 (2021).
pubmed: 33568669 pmcid: 7876008 doi: 10.1038/s41467-021-21136-0
Wittmann, S. et al. Assessment of wafer‐level transfer techniques of graphene with respect to semiconductor industry requirements. Adv. Mater. Technol. 8, 2201587 (2023).
doi: 10.1002/admt.202201587
Lukose, R. et al. Influence of plasma treatment on SiO
pubmed: 34162923 pmcid: 8222355 doi: 10.1038/s41598-021-92432-4
Megra, Y. T., Lim, S., Lim, T., Na, S. R. & Suk, J. W. Enhancement of the adhesion energy between monolayer graphene and SiO
doi: 10.1016/j.apsusc.2021.151243
Koenig, S. P., Boddeti, N. G., Dunn, M. L. & Bunch, J. S. Ultrastrong adhesion of graphene membranes. Nat. Nanotechnol. 6, 543–546 (2011).
pubmed: 21841794 doi: 10.1038/nnano.2011.123
Liu, X. et al. Observation of pull-in instability in graphene membranes under interfacial forces. Nano Lett 13, 2309–2313 (2013).
pubmed: 23614533 doi: 10.1021/nl401180t
Kitt, A. L. et al. How graphene slides: measurement and theory of strain-dependent frictional forces between graphene and SiO
pubmed: 23627605 doi: 10.1021/nl4007112
Boddeti, N. G. et al. Graphene blisters with switchable shapes controlled by pressure and adhesion. Nano Lett 13, 6216–6221 (2013).
pubmed: 24224793 doi: 10.1021/nl4036324
Lloyd, D. et al. Adhesion, stiffness, and instability in atomically thin MoS
pubmed: 28762748 doi: 10.1021/acs.nanolett.7b01735
Dai, Z. et al. Interface-governed deformation of nanobubbles and nanotents formed by two-dimensional materials. Phys. Rev. Lett. 121, 266101 (2018).
pubmed: 30636129 doi: 10.1103/PhysRevLett.121.266101
Calis, M., Lloyd, D., Boddeti, N. & Bunch, J. S. Adhesion of 2D MoS
pubmed: 37011413 doi: 10.1021/acs.nanolett.2c04886
Zong, Z., Chen, C.-L., Dokmeci, M. R. & Wan, K. Direct measurement of graphene adhesion on silicon surface by intercalation of nanoparticles. J. Appl. Phys. 107, 026104 (2010).
doi: 10.1063/1.3294960
Torres, J., Zhu, Y., Liu, P., Lim, S. C. & Yun, M. Adhesion energies of 2D graphene and MoS
doi: 10.1002/pssa.201700512
Dai, Z., Sanchez, D. A., Brennan, C. J. & Lu, N. Radial buckle delamination around 2D material tents. J. Mech. Phys. 137, 103843 (2020).
doi: 10.1016/j.jmps.2019.103843
Jiang, T. & Zhu, Y. Measuring graphene adhesion using atomic force microscopy with a microsphere tip. Nanoscale 7, 10760–10766 (2015).
pubmed: 26035717 doi: 10.1039/C5NR02480C
Spear, J. C., Custer, J. P. & Batteas, J. D. The influence of nanoscale roughness and substrate chemistry on the frictional properties of single and few layer graphene. Nanoscale 7, 10021–10029 (2015).
pubmed: 25899217 doi: 10.1039/C5NR01478F
Suk, J. W. et al. Probing the adhesion interactions of graphene on silicon oxide by nanoindentation. Carbon 103, 63–72 (2016).
doi: 10.1016/j.carbon.2016.02.079
Zeng, X., Peng, Y. & Lang, H. A novel approach to decrease friction of graphene. Carbon 118, 233–240 (2017).
doi: 10.1016/j.carbon.2017.03.042
Li, Y., Huang, S., Wei, C., Wu, C. & Mochalin, V. N. Adhesion of two-dimensional titanium carbides (MXenes) and graphene to silicon. Nat. Commun. 10, 3014 (2019).
pubmed: 31285430 pmcid: 6614499 doi: 10.1038/s41467-019-10982-8
Rokni, H. & Lu, W. Direct measurements of interfacial adhesion in 2D materials and van der Waals heterostructures in ambient air. Nat. Commun. 11, 5607 (2020).
pubmed: 33154376 pmcid: 7645779 doi: 10.1038/s41467-020-19411-7
Ku, B. et al. AFM‐based Hamaker constant determination with blind tip reconstruction. Adv. Mater. Technol. 8, 2200411 (2023).
doi: 10.1002/admt.202200411
Wang, W. et al. Measurement of the cleavage energy of graphite. Nat. Commun. 6, 7853 (2015).
pubmed: 26314373 doi: 10.1038/ncomms8853
Gong, L. et al. Interfacial stress transfer in a graphene monolayer nanocomposite. Adv. Mater. 22, 2694–2697 (2010).
pubmed: 20473982 doi: 10.1002/adma.200904264
Jiang, T., Huang, R. & Zhu, Y. Interfacial sliding and buckling of monolayer graphene on a stretchable substrate. Adv. Funct. Mater. 24, 396–402 (2014).
doi: 10.1002/adfm.201301999
Wang, G. et al. Tuning the interfacial mechanical behaviors of monolayer graphene/PMMA nanocomposites. ACS Appl. Mater. Interfaces 8, 22554–22562 (2016).
pubmed: 27222920 doi: 10.1021/acsami.6b03069
Xu, C., Xue, T., Qiu, W. & Kang, Y. Size effect of the interfacial mechanical behavior of graphene on a stretchable substrate. ACS Appl. Mater. Interfaces 8, 27099–27106 (2016).
pubmed: 27654462 doi: 10.1021/acsami.6b08812
Dai, Z. et al. Mechanical behavior and properties of hydrogen bonded graphene/polymer nano-interfaces. Compos. Sci. Technol. 136, 1–9 (2016).
doi: 10.1016/j.compscitech.2016.09.005
Yoon, T. et al. Direct measurement of adhesion energy of monolayer graphene as-grown on copper and its application to renewable transfer process. Nano Lett 12, 1448–1452 (2012).
pubmed: 22335825 doi: 10.1021/nl204123h
Na, S. R., Suk, J. W., Ruoff, R. S., Huang, R. & Liechti, K. M. Ultra long-range interactions between large area graphene and silicon. ACS Nano 8, 11234–11242 (2014).
pubmed: 25317979 doi: 10.1021/nn503624f
Xu, C. et al. Rate‐dependent decohesion modes in graphene‐sandwiched interfaces. Adv. Mater. Interfaces 6, 1901217 (2019).
doi: 10.1002/admi.201901217
Das, S., Lahiri, D., Lee, D.-Y., Agarwal, A. & Choi, W. Measurements of the adhesion energy of graphene to metallic substrates. Carbon 59, 121–129 (2013).
doi: 10.1016/j.carbon.2013.02.063
Gu, M. et al. Effects of thermal treatment on the adhesion strength and osteoinductive activity of single-layer graphene sheets on titanium substrates. Sci Rep 8, 8141 (2018).
pubmed: 29802306 pmcid: 5970187 doi: 10.1038/s41598-018-26551-w
Ivanov, E., Batakaliev, T., Kotsilkova, R., Otto, M. & Neumaier, D. Study on the adhesion properties of graphene and hexagonal boron nitride monolayers in multilayered micro-devices by scratch adhesion test. J. Mater. Eng. Perform. 30, 5673–5681 (2021).
doi: 10.1007/s11665-021-05877-z
Wang, X. et al. A review on the mechanical properties for thin film and block structure characterised by using nanoscratch test. Nanotechnol. Rev. 8, 628–644 (2019).
doi: 10.1515/ntrev-2019-0055
Dauskardt, R. H., Lane, M., Ma, Q. & Krishna, N. Adhesion and debonding of multi-layer thin film structures. Eng. Fract. Mech. 61, 141–162 (1998).
doi: 10.1016/S0013-7944(98)00052-6
Birringer, R. P., Chidester, P. J. & Dauskardt, R. H. High yield four-point bend thin film adhesion testing techniques. Eng. Fract. Mech. 78, 2390–2398 (2011).
doi: 10.1016/j.engfracmech.2011.05.010
Nguyen, V. L. et al. Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography. Nat. Electron. 6, 146–153 (2023).
doi: 10.1038/s41928-022-00890-z
Pufall, R. et al. Degradation of moulding compounds during highly accelerated stress tests - a simple approach to study adhesion by performing button shear tests. Microelectron. Reliab. 52, 1266–1271 (2012).
doi: 10.1016/j.microrel.2012.03.016
Wang, H. et al. Low-temperature copper bonding strategy with graphene interlayer. ACS Nano 12, 2395–2402 (2018).
pubmed: 29370518 doi: 10.1021/acsnano.7b07739
Pflügler, N. et al. Experimental determination of critical adhesion energies with the advanced button shear test. Microelectron. Reliab. 99, 177–185 (2019).
doi: 10.1016/j.microrel.2019.06.001
Fan, H. B., Wong, C. K. Y. & Yuen, M. M. F. A new method to predict delamination in electronic packages. in Proceedings Electronic Components and Technology, 2005. ECTC ’05. vol. 2 145–150 (IEEE, Lake Buena Vista, FL, USA, 2005).
Bernasko, P. K., Mallik, S. & Takyi, G. Effect of intermetallic compound layer thickness on the shear strength of 1206 chip resistor solder joint. Solder. Surf. Mt. Technol. 27, 52–58 (2015).
doi: 10.1108/SSMT-07-2013-0019
Shohji, I., Shimoyama, S., Ishikawa, H. & Kojima, M. Effect of shear speed on the ball shear strength of Sn-3Ag-0.5Cu solder ball joints. Jpn. Inst. Electron. Packag 1, 9–14 (2008).
Wagner, S. et al. Graphene transfer methods for the fabrication of membrane-based NEMS devices. Microelectron. Eng. 159, 108–113 (2016).
doi: 10.1016/j.mee.2016.02.065
Marx, M. et al. Metalorganic vapor-phase epitaxy growth parameters for two-dimensional MoS
doi: 10.1007/s11664-017-5937-3
Cun, H. et al. Wafer-scale MOCVD growth of monolayer MoS
doi: 10.1007/s12274-019-2502-9
Grundmann, A. et al. Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe
doi: 10.1088/1361-6528/acb947
Zhang, L., Dong, J. & Ding, F. Strategies, status, and challenges in wafer scale single crystalline two-dimensional materials synthesis. Chem. Rev. 121, 6321–6372 (2021).
pubmed: 34047544 doi: 10.1021/acs.chemrev.0c01191
Lin, L., Peng, H. & Liu, Z. Synthesis challenges for graphene industry. Nat. Mater. 18, 520–524 (2019).
pubmed: 31114064 doi: 10.1038/s41563-019-0341-4
Zhang, K., Feng, Y., Wang, F., Yang, Z. & Wang, J. Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications. J. Mater. Chem. C 5, 11992–12022 (2017).
doi: 10.1039/C7TC04300G
Rasool, H. I., Ophus, C., Klug, W. S., Zettl, A. & Gimzewski, J. K. Measurement of the intrinsic strength of crystalline and polycrystalline graphene. Nat. Commun. 4, 2811 (2013).
doi: 10.1038/ncomms3811
Chu, K., Wang, J., Liu, Y. & Geng, Z. Graphene defect engineering for optimizing the interface and mechanical properties of graphene/copper composites. Carbon 140, 112–123 (2018).
doi: 10.1016/j.carbon.2018.08.004
Huang, X. et al. Robust microscale structural superlubricity between graphite and nanostructured surface. Nat. Commun. 14, 2931 (2023).
pubmed: 37217500 pmcid: 10202915 doi: 10.1038/s41467-023-38680-6
Dudek, R. et al. Determination of interface fracture parameters by shear testing using different theoretical approaches. in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems 1/10-10/10 (IEEE, Cascais, Portugal, 2012). https://doi.org/10.1109/ESimE.2012.6191793 .
Durix, L., Dreßler, M., Coutellier, D. & Wunderle, B. On the development of a modified button shear specimen to characterize the mixed mode delamination toughness. Eng. Fract. Mech. 84, 25–40 (2012).
doi: 10.1016/j.engfracmech.2011.12.015
Vesel, A. & Mozetic, M. Surface modification and ageing of PMMA polymer by oxygen plasma treatment. Vacuum 86, 634–637 (2012).
doi: 10.1016/j.vacuum.2011.07.005
Sikora, A. et al. Surface modification of PMMA polymer and its composites with PC61BM fullerene derivative using an atmospheric pressure microwave argon plasma sheet. Sci Rep 11, 9270 (2021).
pubmed: 33927242 pmcid: 8084952 doi: 10.1038/s41598-021-88553-5
Na, S. R. et al. Selective mechanical transfer of graphene from seed copper foil using rate effects. ACS Nano 9, 1325–1335 (2015).
pubmed: 25646863 doi: 10.1021/nn505178g
Shohji, I., Yoshida, T., Takahashi, T. & Hioki, S. Tensile properties of Sn–Ag based lead-free solders and strain rate sensitivity. Mater. Sci. Eng. A 366, 50–55 (2004).
doi: 10.1016/j.msea.2003.09.057
Feng, X. et al. Competing fracture in kinetically controlled transfer printing. Langmuir 23, 12555–12560 (2007).
pubmed: 17990898 doi: 10.1021/la701555n
Meitl, M. A. et al. Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nat. Mater. 5, 33–38 (2006).
doi: 10.1038/nmat1532
Gent, A. N. Adhesion and strength of viscoelastic solids. is there a relationship between adhesion and bulk properties? Langmuir 12, 4492–4496 (1996).
doi: 10.1021/la950887q
Christöfl, P. et al. Comprehensive investigation of the viscoelastic properties of PMMA by nanoindentation. Polym. Test. 93, 106978 (2021).
doi: 10.1016/j.polymertesting.2020.106978
Ionita, D., Cristea, M. & Banabic, D. Viscoelastic behavior of PMMA in relation to deformation mode. J. Therm. Anal. Calorim. 120, 1775–1783 (2015).
doi: 10.1007/s10973-015-4558-4
Persson, B. N. J. & Brener, E. A. Crack propagation in viscoelastic solids. Phys. Rev. E 71, 036123 (2005).
doi: 10.1103/PhysRevE.71.036123
Deng, S., Gao, E., Xu, Z. & Berry, V. Adhesion energy of MoS
pubmed: 28124892 doi: 10.1021/acsami.6b16175
Li, R. et al. Determination of PMMA residues on a chemical-vapor-deposited monolayer of graphene by neutron reflection and atomic force microscopy. Langmuir 34, 1827–1833 (2018).
pubmed: 29303580 doi: 10.1021/acs.langmuir.7b03117
Choi, W., Shehzad, M. A., Park, S. & Seo, Y. Influence of removing PMMA residues on surface of CVD graphene using a contact-mode atomic force microscope. RSC Adv 7, 6943–6949 (2017).
doi: 10.1039/C6RA27436F
Aitken, Z. H. & Huang, R. Effects of mismatch strain and substrate surface corrugation on morphology of supported monolayer graphene. J. Appl. Phys. 107, 123531 (2010).
doi: 10.1063/1.3437642
Li, T. & Zhang, Z. Substrate-regulated morphology of graphene. J. Phys. D: Appl. Phys. 43, 075303 (2010).
doi: 10.1088/0022-3727/43/7/075303
Gao, W. & Huang, R. Effect of surface roughness on adhesion of graphene membranes. J. Phys. D: Appl. Phys. 44, 452001 (2011).
doi: 10.1088/0022-3727/44/45/452001
Agarwal, H. et al. 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators. Nat. Commun. 12, 1070 (2021).
pubmed: 33594048 pmcid: 7887197 doi: 10.1038/s41467-021-20926-w
Piacentini, A. et al. Stable Al
doi: 10.1002/aelm.202200123
Ahn, Y., Kim, J., Ganorkar, S., Kim, Y.-H. & Kim, S.-I. Thermal annealing of graphene to remove polymer residues. Mat Express 6, 69–76 (2016).
doi: 10.1166/mex.2016.1272
Zhuang, B., Li, S., Li, S. & Yin, J. Ways to eliminate PMMA residues on graphene - superclean graphene. Carbon 173, 609–636 (2021).
doi: 10.1016/j.carbon.2020.11.047
Kumar, K., Kim, Y.-S. & Yang, E.-H. The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene. Carbon 65, 35–45 (2013).
doi: 10.1016/j.carbon.2013.07.088
Zheng, F. et al. Critical stable length in wrinkles of two-dimensional materials. ACS Nano 14, 2137–2144 (2020).
pubmed: 31951371 doi: 10.1021/acsnano.9b08928
Metzke, C. et al. On the limits of scanning thermal microscopy of ultrathin films. Materials 13, 518 (2020).
pubmed: 31978971 pmcid: 7040652 doi: 10.3390/ma13030518
Zhang, Y. et al. A review on principles and applications of scanning thermal microscopy (SThM). Adv. Funct. Mater. 30, 1900892 (2020).
doi: 10.1002/adfm.201900892
Metzke, C., Kühnel, F., Weber, J. & Benstetter, G. Scanning thermal microscopy of ultrathin films: numerical studies regarding cantilever displacement, thermal contact areas, heat fluxes, and heat distribution. Nanomaterials 11, 491 (2021).
pubmed: 33669205 pmcid: 7919810 doi: 10.3390/nano11020491
Guen, E. et al. Scanning thermal microscopy on samples of varying effective thermal conductivities and identical flat surfaces. J. Appl. Phys. 128, 235301 (2020).
doi: 10.1063/5.0020276
Sakami, D., Lahmar, A., Scudeller, Y., Danes, F. & Bardon, J. P. Thermal contact resistance and adhesion studies on thin copper films on alumina substrates. J. Adhes. Sci. Technol. 15, 1403–1416 (2001).
doi: 10.1163/156856101753213268
Pelzl, J., Kijamnajsuk, P., Chirtoc, M., Horny, N. & Eisenmenger-Sittner, C. Correlation between thermal interface conductance and mechanical adhesion strength in Cu-coated glassy carbon. Int. J. Thermophys. 36, 2475–2485 (2015).
doi: 10.1007/s10765-015-1879-2
Boddison-Chouinard, J., Scarfe, S., Watanabe, K., Taniguchi, T. & Luican-Mayer, A. Flattening van der Waals heterostructure interfaces by local thermal treatment. Appl. Phys. Lett. 115, 231603 (2019).
doi: 10.1063/1.5131022
Neumann, C. et al. Raman spectroscopy as probe of nanometre-scale strain variations in graphene. Nat. Commun. 6, 8429 (2015).
pubmed: 26416349 doi: 10.1038/ncomms9429
Androulidakis, Ch. et al. Strained hexagonal boron nitride: Phonon shift and Grüneisen parameter. Phys. Rev. B 97, 241414 (2018).
Sanchez, D. A. et al. Mechanics of spontaneously formed nanoblisters trapped by transferred 2D crystals. Proc. Natl. Acad. Sci. U.S.A. 115, 7884–7889 (2018).
pubmed: 30006468 pmcid: 6077740 doi: 10.1073/pnas.1801551115
Li, Y. et al. Adhesion between MXenes and other 2D materials. ACS Appl. Mater. Interfaces 13, 4682–4691 (2021).
pubmed: 33433988 doi: 10.1021/acsami.0c18624

Auteurs

Josef Schätz (J)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.
Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.

Navin Nayi (N)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.

Jonas Weber (J)

Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany.
Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028, Barcelona, Spain.

Christoph Metzke (C)

Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany.
Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043, Hamburg, Germany.

Sebastian Lukas (S)

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.

Jürgen Walter (J)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.

Tim Schaffus (T)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.

Fabian Streb (F)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.

Eros Reato (E)

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.

Agata Piacentini (A)

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.

Annika Grundmann (A)

Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany.

Holger Kalisch (H)

Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany.

Michael Heuken (M)

Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany.
AIXTRON SE, Dornkaulstr. 2, 52134, Herzogenrath, Germany.

Andrei Vescan (A)

Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany.

Stephan Pindl (S)

Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany.

Max C Lemme (MC)

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany. max.lemme@rwth-aachen.de.
AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany. max.lemme@rwth-aachen.de.

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