Engineering interfacial polarization switching in van der Waals multilayers.
Journal
Nature nanotechnology
ISSN: 1748-3395
Titre abrégé: Nat Nanotechnol
Pays: England
ID NLM: 101283273
Informations de publication
Date de publication:
19 Mar 2024
19 Mar 2024
Historique:
received:
28
10
2023
accepted:
29
02
2024
medline:
20
3
2024
pubmed:
20
3
2024
entrez:
20
3
2024
Statut:
aheadofprint
Résumé
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains. The engendered tunability is unparalleled in conventional bulk ferroelectrics or polar bilayers. By means of operando transmission electron microscopy we show how alterations of the relative rotations of three WSe
Identifiants
pubmed: 38504024
doi: 10.1038/s41565-024-01642-0
pii: 10.1038/s41565-024-01642-0
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : National Science Foundation (NSF)
ID : DMR-2238196
Organisme : U.S. Department of Energy (DOE)
ID : DE-AC02-05CH11231
Organisme : Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation)
ID : 10637
Organisme : Canadian Institute for Advanced Research (L'Institut Canadien de Recherches Avancées)
ID : GS21-011
Organisme : U.S. Department of Defense (United States Department of Defense)
ID : FA9550-21-F-0003
Organisme : U.S. Department of Energy (DOE)
ID : DE-AC02-05CH11231
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 20H00354
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 23H02052
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 20H00354
Organisme : MEXT | Japan Society for the Promotion of Science (JSPS)
ID : 23H02052
Informations de copyright
© 2024. The Author(s), under exclusive licence to Springer Nature Limited.
Références
Haertling, G. H. Ferroelectric ceramics: history and technology. J. Am. Ceram. 82, 797–818 (1999).
doi: 10.1111/j.1151-2916.1999.tb01840.x
Mikolajick, T., Schroeder, U. & Slesazeck, S. The past, the present, and the future of ferroelectric memories. IEEE Trans. Electron Devices 67, 1434–1443 (2020).
doi: 10.1109/TED.2020.2976148
Li, L. & Wu, M. Binary compound bilayer and multilayer with vertical polarizations: two-dimensional ferroelectrics, multiferroics, and nanogenerators. ACS Nano 11, 6382–6388 (2017).
pubmed: 28602074
doi: 10.1021/acsnano.7b02756
Yasuda, K., Wang, X., Watanabe, K., Taniguchi, T. & Jarillo-Herrero, P. Stacking-engineered ferroelectricity in bilayer boron nitride. Science 372, 1458–1462 (2021).
doi: 10.1126/science.abd3230
Vizner Stern, M. et al. Interfacial ferroelectricity by van der Waals sliding. Science 372, 1462–1466 (2021).
doi: 10.1126/science.abe8177
Ferreira, F., Enaldiev, V. & Fal’ko, V. Scaleability of dielectric susceptibility ε
doi: 10.1103/PhysRevB.106.125408
Ferreira, F., Enaldiev, V. V., Fal’ko, V. I. & Magorrian, S. J. Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors. Sci. Rep. 11, 13422 (2021).
pubmed: 34183714
pmcid: 8239035
doi: 10.1038/s41598-021-92710-1
Wang, X. et al. Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides. Nat. Nanotechnol. 17, 367–371 (2022).
pubmed: 35039684
doi: 10.1038/s41565-021-01059-z
Weston, A. et al. Interfacial ferroelectricity in marginally twisted 2D semiconductors. Nat. Nanotechnol. 17, 390–395 (2022).
pubmed: 35210566
pmcid: 9018412
doi: 10.1038/s41565-022-01072-w
Rogée, L. et al. Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides. Science 376, 973–978 (2022).
pubmed: 35617404
doi: 10.1126/science.abm5734
Deb, S. et al. Cumulative polarization in conductive interfacial ferroelectrics. Nature 612, 465–469 (2022).
pubmed: 36352233
doi: 10.1038/s41586-022-05341-5
Meng, P. et al. Sliding induced multiple polarization states in two-dimensional ferroelectrics. Nat. Commun. 13, 7696 (2022).
pubmed: 36509811
pmcid: 9744910
doi: 10.1038/s41467-022-35339-6
Ko, K. et al. Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers. Nat. Mater. 22, 992–998 (2023).
pubmed: 37365226
doi: 10.1038/s41563-023-01595-0
Yoo, H. et al. Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene. Nat. Mater. 18, 448–453 (2019).
pubmed: 30988451
doi: 10.1038/s41563-019-0346-z
Weston, A. et al. Atomic reconstruction in twisted bilayers of transition metal dichalcogenides. Nat. Nanotechnol. 15, 592–597 (2020).
pubmed: 32451502
doi: 10.1038/s41565-020-0682-9
Craig, I. M. et al. Local atomic stacking and symmetry in twisted graphene trilayers. Nat. Mater. 23, 323–330 (2024).
pubmed: 38191631
doi: 10.1038/s41563-023-01783-y
Huang, P. Y. et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts. Nature 469, 389–392 (2011).
pubmed: 21209615
doi: 10.1038/nature09718
Sung, S. H., Schnitzer, N., Brown, L., Park, J. & Hovden, R. Stacking, strain, and twist in 2D materials quantified by 3D electron diffraction. Phys. Rev. Mater. 3, 064003 (2019).
doi: 10.1103/PhysRevMaterials.3.064003
Kazmierczak, N. P. et al. Strain fields in twisted bilayer graphene. Nat. Mater. 20, 956–963 (2021).
pubmed: 33859383
doi: 10.1038/s41563-021-00973-w
Zachman, M. J. et al. Interferometric 4D-STEM for lattice distortion and interlayer spacing measurements of bilayer and trilayer 2D materials. Small 17, 2100388 (2021).
doi: 10.1002/smll.202100388
Van Winkle, M. et al. Rotational and dilational reconstruction in transition metal dichalcogenide moiré bilayers. Nat. Commun. 14, 2989 (2023).
pubmed: 37225701
pmcid: 10209090
doi: 10.1038/s41467-023-38504-7
Alden, J. S. et al. Strain solitons and topological defects in bilayer graphene. Proc. Natl Acad. Sci. USA 110, 11256–11260 (2013).
pubmed: 23798395
pmcid: 3710814
doi: 10.1073/pnas.1309394110
Enaldiev, V. V., Ferreira, F. & Fal’ko, V. I. A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors. Nano. Lett. 22, 1534–1540 (2022).
pubmed: 35129361
pmcid: 9171827
doi: 10.1021/acs.nanolett.1c04210
Engelke, R. et al. Topological nature of dislocation networks in two-dimensional moiré materials. Phys. Rev. B 107, 125413 (2023).
doi: 10.1103/PhysRevB.107.125413
Huder, L. et al. Electronic spectrum of twisted graphene layers under heterostrain. Phys. Rev. Lett. 120, 156405 (2018).
pubmed: 29756887
doi: 10.1103/PhysRevLett.120.156405
Edelberg, D., Kumar, H., Shenoy, V., Ochoa, H. & Pasupathy, A. N. Tunable strain soliton networks confine electrons in van der Waals materials. Nat. Phys. 16, 1097–1102 (2020).
doi: 10.1038/s41567-020-0953-2
Lau, C. N., Bockrath, M. W., Mak, K. F. & Zhang, F. Reproducibility in the fabrication and physics of moiré materials. Nature 602, 41–50 (2022).
pubmed: 35110759
doi: 10.1038/s41586-021-04173-z
Cosma, D. A., Wallbank, J. R., Cheianov, V. & Fal’Ko, V. I. Moiré pattern as a magnifying glass for strain and dislocations in van der Waals heterostructures. Faraday Discuss. 173, 137–143 (2014).
pubmed: 25465904
Molino, L. et al. Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks. Adv. Mater. 35, 2207816 (2023).
doi: 10.1002/adma.202207816
Zhang, H., Fu, Z., Legut, D., Germann, T. C. & Zhang, R. Stacking stability and sliding mechanism in weakly bonded 2D transition metal carbides by van der Waals force. RSC Adv. 7, 55912–55919 (2017).
doi: 10.1039/C7RA11139H
Johnson, M., Bloemen, P., Den Broeder, F. & De Vries, J. Magnetic anisotropy in metallic multilayers. Rep. Prog. Phys. 59, 1409 (1996).
doi: 10.1088/0034-4885/59/11/002
Paes, V. Z. & Mosca, D. H. Effective elastic and magnetoelastic anisotropies for thin films with hexagonal and cubic crystal structures. J. Magn. Magn. Mater. 330, 81–87 (2013).
doi: 10.1016/j.jmmm.2012.10.036
Geisenhof, F. R. et al. Anisotropic strain-induced soliton movement changes stacking order and band structure of graphene multilayers: implications for charge transport. ACS Appl. Nano Mater. 2, 6067–6075 (2019).
doi: 10.1021/acsanm.9b01603
Lee, D. et al. Giant flexoelectric effect in ferroelectric epitaxial thin films. Phys. Rev. Lett. 107, 057602 (2011).
pubmed: 21867099
doi: 10.1103/PhysRevLett.107.057602
Jeon, B. C. et al. Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO
pubmed: 23897638
doi: 10.1002/adma.201301601
Hou, W. et al. Nonvolatile ferroelastic strain from flexoelectric internal bias engineering. Phys. Rev. Appl. 17, 024013 (2022).
doi: 10.1103/PhysRevApplied.17.024013
Wu, M. Two-dimensional van der Waals ferroelectrics: scientific and technological opportunities. ACS Nano 15, 9229–9237 (2021).
pubmed: 34010553
doi: 10.1021/acsnano.0c08483
Wang, C., You, L., Cobden, D. & Wang, J. Towards two-dimensional van der Waals ferroelectrics. Nat. Mater. 22, 542–552 (2023).
pubmed: 36690757
doi: 10.1038/s41563-022-01422-y
Chang, K. et al. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science 353, 274–278 (2016).
pubmed: 27418506
doi: 10.1126/science.aad8609
Liu, F. et al. Room-temperature ferroelectricity in CuInP
Ding, W. et al. Prediction of intrinsic two-dimensional ferroelectrics in In
pubmed: 28387225
pmcid: 5385629
doi: 10.1038/ncomms14956
Cui, C. et al. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In
pubmed: 29378142
doi: 10.1021/acs.nanolett.7b04852
Fei, Z. et al. Ferroelectric switching of a two-dimensional metal. Nature 560, 336–339 (2018).
pubmed: 30038286
doi: 10.1038/s41586-018-0336-3
Yuan, S. et al. Room-temperature ferroelectricity in MoTe
pubmed: 30992431
pmcid: 6467908
doi: 10.1038/s41467-019-09669-x
Higashitarumizu, N. et al. Purely in-plane ferroelectricity in monolayer SnSat room temperature. Nat. Commun. 11, 2428 (2020).
pubmed: 32415121
pmcid: 7229038
doi: 10.1038/s41467-020-16291-9
Huang, W. et al. Gate-coupling-enabled robust hysteresis for nonvolatile memory and programmable rectifier in van der Waals ferroelectric heterojunctions. Adv. Mater. 32, 1908040 (2020).
doi: 10.1002/adma.201908040
Gong, C., Kim, E. M., Wang, Y., Lee, G. & Zhang, X. Multiferroicity in atomic van der Waals heterostructures. Nat. Commun. 10, 2657 (2019).
pubmed: 31201316
pmcid: 6570651
doi: 10.1038/s41467-019-10693-0
Dou, K., Du, W., Dai, Y., Huang, B. & Ma, Y. Two-dimensional magnetoelectric multiferroics in a MnSTe/In
doi: 10.1103/PhysRevB.105.205427
Huang, D., Choi, J., Shih, C.-K. & Li, X. Excitons in semiconductor moiré superlattices. Nat. Nanotechnol. 17, 227–238 (2022).
pubmed: 35288673
doi: 10.1038/s41565-021-01068-y
Kim, K. et al. van der waals heterostructures with high accuracy rotational alignment. Nano Lett. 16, 1989–1995 (2016).
pubmed: 26859527
doi: 10.1021/acs.nanolett.5b05263
Craig, I.M. pyInterferometery (GitHub, 2023); https://github.com/bediakolab/pyInterferometry
Savitzky, B. H. et al. py4dstem: a software package for four-dimensional scanning transmission electron microscopy data analysis. Microsc. Microanal. 27, 712–743 (2021).
pubmed: 34018475
doi: 10.1017/S1431927621000477
Madsen, J. & Susi, T. The abtem code: transmission electron microscopy from first principles. ORE 1, 13015 (2021).
Van Winkle, M. & Bediako, D. Source data for “Engineering interfacial polarization switching in van der Waals multilayers” (Zenodo, 2024); https://doi.org/10.5281/zenodo.10697962