Plasma-Driven Tuning of Dielectric Permittivity in Graphene.

2D plasmons N‐graphene negative permittivity

Journal

Small (Weinheim an der Bergstrasse, Germany)
ISSN: 1613-6829
Titre abrégé: Small
Pays: Germany
ID NLM: 101235338

Informations de publication

Date de publication:
27 Mar 2024
Historique:
revised: 29 02 2024
received: 23 04 2023
medline: 27 3 2024
pubmed: 27 3 2024
entrez: 27 3 2024
Statut: aheadofprint

Résumé

Materials with tunable negative electromagnetic performance, i.e., where dielectric permittivity becomes negative, have long been pursued in materials research due to their peculiar electromagnetic (EM) characteristics. Here, this promising feature is reported in materials on the case of plasma-synthesized nitrogen-doped graphene sheets with tunable permittivity over a wide (1-40 GHz) frequency range. Selectively incorporated nitrogen atoms in a graphene scaffold tailor the electronic structure in a way that provides an ultra-low energy (0.5-2 eV) 2D surface plasmon excitation, leading to subunitary and negative dielectric constant values in the Ka-band, from 30 up to 40 GHz. By allowing the tailoring of structures at atomic scale, this novel plasma-based approach creates a new paradigm for designing 2D nanomaterials like nanocarbons with controllable and tunable permittivity, opening a path to the next generation of 2D metamaterials.

Identifiants

pubmed: 38533978
doi: 10.1002/smll.202303421
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

e2303421

Subventions

Organisme : European Union's Horizon Research
ID : 766894
Organisme : Portuguese FCT - Fundação para a Ciência e a Tecnologia
ID : UIDB/50010/2020
Organisme : Portuguese FCT - Fundação para a Ciência e a Tecnologia
ID : UIDP/50010/2020
Organisme : Portuguese FCT - Fundação para a Ciência e a Tecnologia
ID : LA/P/0061/202
Organisme : Eager project
ID : PTDC/NAN-MAT/30565/2017
Organisme : iBB
Organisme : i4HB projects
ID : UIDB/04565/2020
Organisme : i4HB projects
ID : UIDP/04565/2020
Organisme : i4HB projects
ID : LA/P/0140/2020
Organisme : Slovenian Research Agency
ID : N2-0107
Organisme : Slovenian Research Agency
ID : N2-0213
Organisme : Slovenian Research Agency
ID : Z2-4467
Organisme : EU Graphene Flagship FLAG-ERA III JTC 2021 project "VEGA"
ID : ANR-21-GRF1-0004
Organisme : EU Graphene Flagship FLAG-ERA III JTC 2021 project "VEGA"
ID : MIZS-PR-11938

Informations de copyright

© 2024 The Authors. Small published by Wiley‐VCH GmbH.

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Auteurs

Elena Tatarova (E)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Ana Dias (A)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Plamen Dankov (P)

Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria.

Jivko Kissovski (J)

Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria.

Ana Maria Botelho do Rego (AM)

BSIRG, iBB-Institute for Bioengineering and Biosciences, Department of Chemical Engineering (DEQ), and Associate Laboratory i4HB-Institute for Health and Bioeconomy, Instituto Superior Técnico, Universidade de Lisboa, Lisbon, 1049-001, Portugal.

Neli Bundaleska (N)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Edgar Felizardo (E)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Miroslav Abrashev (M)

Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria.

Ana Maria Ferraria (AM)

BSIRG, iBB-Institute for Bioengineering and Biosciences, Department of Chemical Engineering (DEQ), and Associate Laboratory i4HB-Institute for Health and Bioeconomy, Instituto Superior Técnico, Universidade de Lisboa, Lisbon, 1049-001, Portugal.

Thomas Strunskus (T)

Institute for Materials Science, Christian Albrechts Universitaet zu Kiel, 24118, Kiel, Germany.

Vasyl Shvalya (V)

Department of Gaseous Electronics (F6), Jožef Stefan Institute, Ljubljana, 1000, Slovenia.

Neelakandan M Santhosh (NM)

Department of Gaseous Electronics (F6), Jožef Stefan Institute, Ljubljana, 1000, Slovenia.

Ivan Valeriev Ivanov (IV)

Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria.

Martin Košiček (M)

Department of Gaseous Electronics (F6), Jožef Stefan Institute, Ljubljana, 1000, Slovenia.

Janez Zavašnik (J)

Department of Gaseous Electronics (F6), Jožef Stefan Institute, Ljubljana, 1000, Slovenia.

Luis Lemos Alves (LL)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Bruno Gonçalves (B)

Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Lisboa, 1049, Portugal.

Uroš Cvelbar (U)

Department of Gaseous Electronics (F6), Jožef Stefan Institute, Ljubljana, 1000, Slovenia.

Classifications MeSH