Selenium alloyed tellurium oxide for amorphous p-channel transistors.

Journal

Nature
ISSN: 1476-4687
Titre abrégé: Nature
Pays: England
ID NLM: 0410462

Informations de publication

Date de publication:
10 Apr 2024
Historique:
received: 07 02 2023
accepted: 27 03 2024
medline: 11 4 2024
pubmed: 11 4 2024
entrez: 10 4 2024
Statut: aheadofprint

Résumé

Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simplicity, and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO

Identifiants

DOI: 10.1038/s41586-024-07360-w PMID: 38599238
pubmed: 38599238
doi: 10.1038/s41586-024-07360-w
pii: 10.1038/s41586-024-07360-w
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Informations de copyright

© 2024. The Author(s), under exclusive licence to Springer Nature Limited.

Auteurs

Ao Liu (A)

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China. ao.liu@uestc.edu.cn.
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea. ao.liu@uestc.edu.cn.
Department of Chemistry, Northwestern University, Evanston, Illinois, USA. ao.liu@uestc.edu.cn.
ORCID: 0000-0003-2232-1633

Yong-Sung Kim (YS)

Korea Research Institute of Standards and Science, Daejeon, Republic of Korea.
Department of Nano Science, University of Science and Technology, Daejeon, Republic of Korea.
ORCID: 0000-0002-6057-2997

Min Gyu Kim (MG)

Beamline Research Division, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea.
ORCID: 0000-0002-2366-6898

Youjin Reo (Y)

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.
ORCID: 0000-0001-7939-5946

Taoyu Zou (T)

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.

Taesu Choi (T)

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea.

Sai Bai (S)

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.
ORCID: 0000-0001-7623-686X

Huihui Zhu (H)

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea. hhzhu@uestc.edu.cn.
Department of Chemistry, Northwestern University, Evanston, Illinois, USA. hhzhu@uestc.edu.cn.
School of Physics, University of Electronic Science and Technology of China, Chengdu, China. hhzhu@uestc.edu.cn.
ORCID: 0000-0002-7241-3344

Yong-Young Noh (YY)

Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea. yynoh@postech.ac.kr.
ORCID: 0000-0001-7222-2401

Classifications MeSH