Gate-Tunable Multiband van der Waals Photodetector and Polarization Sensor.

2D optoelectronics gate-tunable multiband photodetector telecommunications band

Journal

ACS nano
ISSN: 1936-086X
Titre abrégé: ACS Nano
Pays: United States
ID NLM: 101313589

Informations de publication

Date de publication:
16 Apr 2024
Historique:
medline: 16 4 2024
pubmed: 16 4 2024
entrez: 16 4 2024
Statut: aheadofprint

Résumé

A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, band gaps, and photoelectrical responses, which is extremely difficult to engineer using traditional epitaxial films. Here, we develop a multifunctional and high-performance photosensor using all van der Waals materials. The device features a gate-tunable spectral response that is switchable between near-infrared/visible and short-/midwave infrared, as well as broad-band operation, at room temperature. The linear polarization sensitivity in the telecommunication O-band can also be directly modulated between horizontal, vertical, and nonpolarizing modes. These effects originate from the balance of photocurrent generation in two of the active layers that can be manipulated by an electric field. The photodetector features high detectivity (>10

Identifiants

pubmed: 38626400
doi: 10.1021/acsnano.4c00181
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Auteurs

Daozhi Shen (D)

School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

HeeBong Yang (H)

Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Tarun Patel (T)

Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Daniel A Rhodes (DA)

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.

Thomas Timusk (T)

Department of Physics and Astronomy, McMaster University, Hamilton, Ontario L8S 4M1, Canada.

Y Norman Zhou (YN)

Centre for Advanced Materials Joining and Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Na Young Kim (NY)

Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Adam W Tsen (AW)

Institute for Quantum Computing, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.

Classifications MeSH