Light-Intensity Switching of Graphene/WSe
graphene/WSe2 van der Waals heterojunction
optoelectronic synapses
photogating
phototransistors
Journal
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
ISSN: 2198-3844
Titre abrégé: Adv Sci (Weinh)
Pays: Germany
ID NLM: 101664569
Informations de publication
Date de publication:
22 Apr 2024
22 Apr 2024
Historique:
revised:
28
03
2024
received:
16
12
2023
medline:
22
4
2024
pubmed:
22
4
2024
entrez:
22
4
2024
Statut:
aheadofprint
Résumé
2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed results in ultrahigh responsivity and tunable photoconductance. Yet, optical potentiation and depression remain mostly modulated by gate bias, requiring relatively high energy inputs. Thus, advanced all-optical synapse switching strategies are still needed. In this work, a reversible switching between positive photoconductivity (PPC) and negative photoconductivity (NPC) is achieved in graphene/WSe
Identifiants
pubmed: 38647376
doi: 10.1002/advs.202309876
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
e2309876Subventions
Organisme : Korean-Swiss Science and Technology Cooperation Fund
ID : IZKSZ2_188341
Organisme : National Research Foundation of Korea
Organisme : Ministry of Science and ICT
ID : 2019K1A3A1A14064929
Organisme : Ministry of Science and ICT
ID : 2022R1A2C2092095
Informations de copyright
© 2024 The Authors. Advanced Science published by Wiley‐VCH GmbH.
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