Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance.
Al2O3 dielectric passivation
crystalline silicon
electron paramagnetic resonance
nafion
photoluminescence
surface passivation
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
22 Apr 2024
22 Apr 2024
Historique:
medline:
23
4
2024
pubmed:
23
4
2024
entrez:
23
4
2024
Statut:
aheadofprint
Résumé
In monocrystalline Si (c-Si) solar cells, identification and mitigation of bulk defects are crucial to achieving a high photoconversion efficiency. To spectroscopically detect defects in the c-Si bulk, it is desirable to passivate the surface defects. Passivation of the c-Si surface with dielectrics such as Al
Identifiants
pubmed: 38650370
doi: 10.1021/acsami.4c03872
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM