Elemental quantification using electron energy-loss spectroscopy with a low voltage scanning transmission electron microscope (STEM-EELS).
Damage
Electron energy loss spectroscopy
Low beam voltage
Quantification
Stem
Journal
Ultramicroscopy
ISSN: 1879-2723
Titre abrégé: Ultramicroscopy
Pays: Netherlands
ID NLM: 7513702
Informations de publication
Date de publication:
23 Apr 2024
23 Apr 2024
Historique:
received:
18
01
2024
revised:
12
04
2024
accepted:
20
04
2024
medline:
29
4
2024
pubmed:
29
4
2024
entrez:
28
4
2024
Statut:
aheadofprint
Résumé
Electron beam damage in electron microscopes is becoming more and more problematic in material research with the increasing demand of characterization of new beam sensitive material such as Li based compounds used in lithium-ion batteries. To avoid radiolysis damage, it has become common practice to use Cryo-EM, however, knock-on damage can still occur in conventional TEM/STEM with a high-accelerating voltage (200-300 keV). In this work, electron energy loss spectroscopy with an accelerating voltage of 30,20 and 10 keV was explored with h-BN, TiB
Identifiants
pubmed: 38678862
pii: S0304-3991(24)00056-1
doi: 10.1016/j.ultramic.2024.113977
pii:
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
113977Informations de copyright
Copyright © 2024 The Author(s). Published by Elsevier B.V. All rights reserved.
Déclaration de conflit d'intérêts
Declaration of competing interest The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Raynald Gauvin reports financial support was provided by Natural Sciences and Engineering Research Council of Canada. Raynald Gauvin reports financial support was provided by Hydro-Québec. If there are other authors, they declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.