Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V
epitaxy
metal−insulator transition
molecular beam epitaxy
strong electron correlations
thin films
transition metal oxides
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
29 Apr 2024
29 Apr 2024
Historique:
medline:
29
4
2024
pubmed:
29
4
2024
entrez:
29
4
2024
Statut:
aheadofprint
Résumé
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V
Identifiants
pubmed: 38683636
doi: 10.1021/acsami.3c18807
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM