Synthesis and structures of cobalt-expanded zirconium- and cerium-oxo clusters as precursors for mixed-metal oxide thin films.

Transforming current complementary metal-oxide-semiconductor (CMOS) technology to fabricate memory chips and microprocessors into environmentally friendlier electronics requires the development of new approaches to resource- and energy-efficient electron transport and switching materials. Metal and multi-metal oxide layers play a key role in high-end technical applications. However, these layers are commonly produced through high-energy and high-temperature procedures. Herein, we demonstrate our first attempts to obtain stimuli-responsive mixed-metal oxide thin films from solution-processed molecular precursors under milder conditions. The molecular compounds of interest were prepared by one-pot reactions of a Co