Giant electron-mediated phononic nonlinearity in semiconductor-piezoelectric heterostructures.
Journal
Nature materials
ISSN: 1476-4660
Titre abrégé: Nat Mater
Pays: England
ID NLM: 101155473
Informations de publication
Date de publication:
03 May 2024
03 May 2024
Historique:
received:
02
05
2023
accepted:
26
03
2024
medline:
4
5
2024
pubmed:
4
5
2024
entrez:
3
5
2024
Statut:
aheadofprint
Résumé
Efficient and deterministic nonlinear phononic interactions could revolutionize classical and quantum information processing at radio frequencies in much the same way that nonlinear photonic interactions have at optical frequencies. Here we show that in the important class of phononic materials that are piezoelectric, deterministic nonlinear phononic interactions can be enhanced by orders of magnitude via the heterogeneous integration of high-mobility semiconductor materials. To this end, a lithium niobate and indium gallium arsenide heterostructure is utilized to produce the most efficient three- and four-wave phononic mixing to date, to the best of our knowledge. We then show that the conversion efficiency can be further enhanced by applying semiconductor bias fields that amplify the phonons. We present a theoretical model that accurately predicts the three-wave mixing efficiencies in this work and extrapolate that these nonlinearities can be enhanced far beyond what is demonstrated here by confining phonons to smaller dimensions in waveguides and optimizing the semiconductor material properties.
Identifiants
pubmed: 38702414
doi: 10.1038/s41563-024-01882-4
pii: 10.1038/s41563-024-01882-4
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Subventions
Organisme : United States Department of Defense | Defense Advanced Research Projects Agency (DARPA)
ID : D23AP00174-00
Informations de copyright
© 2024. The Author(s), under exclusive licence to Springer Nature Limited.
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