Unraveling Exciton-Plasmon Coupling and the PIRET Mechanism in Decorated Silicon Nanowires.


Journal

The journal of physical chemistry letters
ISSN: 1948-7185
Titre abrégé: J Phys Chem Lett
Pays: United States
ID NLM: 101526034

Informations de publication

Date de publication:
07 May 2024
Historique:
medline: 7 5 2024
pubmed: 7 5 2024
entrez: 7 5 2024
Statut: aheadofprint

Résumé

Exciton-plasmon coupling is a fascinating physical phenomenon that has been investigated in various metal semiconductor systems. Intentionally chosen silicon nanowires (SiNWs) systems act as a host material for providing exciton as well as silicon oxide as a thin dielectric. A clear blue-shift in photoluminescence (PL) peak and a significant increase in visible range absorption were observed for metal nanoparticle (MNP) decorated SiNWs (D-SiNWs) which signifies the presence of exciton-plasmon coupling. A further investigation reveals that the possibility of the occurrence of the plasmon-induced resonance energy transfer (PIRET) mechanism is higher. The PL intensity enhancement in Au-decorated SiNWs is higher (∼38 times) in comparison to that in Pt due to the presence of a strong and localized electric field of plasmons near the interface of metal and semiconductors. Moreover, splitting in PL for gold-decorated SiNWs might be due to the presence of dipole-quadrupole coupling along with dipole-dipole coupling, which further increases the strength of the PIRET mechanism.

Identifiants

pubmed: 38713476
doi: 10.1021/acs.jpclett.4c01010
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

5171-5176

Auteurs

Aarti Diwan (A)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Pooja Yadav (P)

National Institute of Standard and Technology, Gaithersburg, Maryland 20899, United States.

Abhishek S Shekhawat (AS)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Akila C (A)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Dhatchayani M (D)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Rituraj Sharma (R)

Centre for Scientific and Applied Research (CSAR), IPS Academy, AB Road, Rajendra Nagar, Indore, India 452012.

Anand M Shrivastav (AM)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Rajesh Kumar (R)

Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol, India 453552.

Tulika Srivastava (T)

Department of Electronics & Communication, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Chennai, India 603203.

Shailendra K Saxena (SK)

Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India 603203.

Classifications MeSH