Goos-Hänchen shift in cryogenic defect photonic crystals composed of superconductor HgBa2Ca2Cu3O8+δ.


Journal

PloS one
ISSN: 1932-6203
Titre abrégé: PLoS One
Pays: United States
ID NLM: 101285081

Informations de publication

Date de publication:
2024
Historique:
received: 06 12 2023
accepted: 24 03 2024
medline: 10 5 2024
pubmed: 10 5 2024
entrez: 9 5 2024
Statut: epublish

Résumé

We explore theoretically Goos-Hänchen (GH) shift around the defect mode in superconducting defective photonic crystals (PCs) in cryogenic environment. The defective PCs are constructed by alternating semiconductors and superconductors. A defect mode arises in the photonic bandgap and sensitively depends on environment temperature and hydrostatic pressure. Reflection and transmission coefficient phases make an abruptly jump at the defect mode and giant GH shifts have been achieved around this mode. The maximum GH shift can get as high as 103λ (incident wavelength), which could be modulated by the values of temperature and hydrostatic pressure. This study may be utilized for pressure- or temperature-sensors in cryogenic environment.

Identifiants

pubmed: 38722957
doi: 10.1371/journal.pone.0302142
pii: PONE-D-23-40753
doi:

Types de publication

Journal Article Research Support, Non-U.S. Gov't

Langues

eng

Sous-ensembles de citation

IM

Pagination

e0302142

Informations de copyright

Copyright: © 2024 Liu et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

Déclaration de conflit d'intérêts

The authors have declared that no competing interests exist.

Auteurs

Fangmei Liu (F)

School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning, China.

Haiyang Hu (H)

School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning, China.

Dong Zhao (D)

School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning, China.
Laboratory of Optoelectronic Information and Intelligent Control, Hubei University of Science and Technology, Xianning, China.

Fanghua Liu (F)

School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning, China.
Laboratory of Optoelectronic Information and Intelligent Control, Hubei University of Science and Technology, Xianning, China.

Miaomiao Zhao (M)

School of Electronic and Information Engineering, Hubei University of Science and Technology, Xianning, China.
Laboratory of Optoelectronic Information and Intelligent Control, Hubei University of Science and Technology, Xianning, China.

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