Bounds to electron spin qubit variability for scalable CMOS architectures.
Journal
Nature communications
ISSN: 2041-1723
Titre abrégé: Nat Commun
Pays: England
ID NLM: 101528555
Informations de publication
Date de publication:
20 May 2024
20 May 2024
Historique:
received:
30
06
2023
accepted:
06
05
2024
medline:
21
5
2024
pubmed:
21
5
2024
entrez:
20
5
2024
Statut:
epublish
Résumé
Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO
Identifiants
pubmed: 38769086
doi: 10.1038/s41467-024-48557-x
pii: 10.1038/s41467-024-48557-x
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
4299Subventions
Organisme : Centre of Excellence for Electromaterials Science, Australian Research Council (ARC Centre of Excellence for Electromaterials Science)
ID : FL190100167
Organisme : Centre of Excellence for Electromaterials Science, Australian Research Council (ARC Centre of Excellence for Electromaterials Science)
ID : CE170100012
Organisme : United States Department of Defense | United States Army | U.S. Army Research, Development and Engineering Command | Army Research Office (ARO)
ID : W911NF-23-10092
Organisme : United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research)
ID : FA2386-22-1-407
Informations de copyright
© 2024. The Author(s).
Références
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