Optical characteristics of thin film-based InGaN micro-LED arrays: a study on size effect and far field behavior.

Micro-light emitting diodes (µ-LEDs) are considered the key enabler for various high-resolution micro-display applications such as augmented reality, smartphones or head-up displays. Within this study we fabricated nitride-based µ-LED arrays in a thin film chip architecture with lateral pixel sizes down to 1 µm. A metal mirror on the p-side enhances the light outcoupling via the n-side after removal of the epitaxial growth substrate. Mounted devices with pixel sizes ranging from 1×1 to 8×8 µm